APTGF25H120T1G Datasheet APTGF25H120T1G | P1-P3

APTGF25H120T1G

APTGF25H120T1G – Rev 2 October , 2012

www.microsemi.com

1

–

7

Q3

Q4

1

2

9

Q2

Q1

6

4

11

8

10

12

CR2

CR1

3

7

5

NTC

CR4

CR3

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C

40

I

C

Continuous Collector Current

T

C

= 80°C

25

I

CM

Pulsed Collector Current T

C

= 25°C 100

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 208 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 50A@1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Non Punch Through (NPT) Fast IGBT

- Low voltage drop

- Low tail current

- Switching frequency up to 50 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

- Symmetrical design

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

 RoHS Compliant

Full - Bridge

N

PT IGBT Power Module

V

CES

= 1200V

I

C

= 25A @ Tc = 80°C

APTGF25H120T1G

APTGF25H120T1G – Rev 2 October , 2012

www.microsemi.com

2

–

7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C

250

I

CES

Zero Gate Voltage Collector Current

V

GE

= 0V

V

CE

= 1200V

T

j

= 125°C

500

µA

T

j

= 25°C

2.5 3.2 3.7

V

CE(sat)

Collector Emitter saturation Voltage

V

GE

=15V

I

C

= 25A

T

j

= 125°C

4.0

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1mA 4 6 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 1650

C

oes

Output Capacitance 250

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

110

pF

Q

g

Total gate Charge 160

Q

ge

Gate – Emitter Charge 10

Q

gc

Gate – Collector Charge

V

GE

= 15V

V

Bus

= 600V

I

C

=25A

70

nC

T

d(on)

Turn-on Delay Time 60

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 305

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= 15V

V

Bus

= 600V

I

C

= 25A

R

G

= 22

30

ns

T

d(on)

Turn-on Delay Time 60

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 346

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= 15V

V

Bus

= 600V

I

C

= 25A

R

G

= 22

40

ns

E

on

Turn-on Switching Energy T

j

= 125°C 3.5

E

off

Turn-off Switching Energy

V

GE

= 15V

V

Bus

= 600V

I

C

= 25A

R

G

= 22

T

j

= 125°C 1.5

mJ

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 100

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 125°C 500

µA

I

F

DC Forward Current

Tc = 80°C 30 A

I

F

= 30A 2.6 3.1

I

F

= 60A

3.2

V

F

Diode Forward Voltage

I

F

= 30A T

j

= 125°C

1.8

V

T

j

= 25°C 300

t

rr

Reverse Recovery Time

T

j

= 125°C 380

ns

T

j

= 25°C 360

Q

rr

Reverse Recovery Charge

I

F

= 30A

V

R

= 800V

di/dt =200A/µs

T

j

= 125°C 1700

nC

APTGF25H120T1G

APTGF25H120T1G – Rev 2 October , 2012

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.6

R

thJC

Junction to Case Thermal Resistance

Diode 1.2

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline

(dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGF25H120T1G

APTGF25H120T1G

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