APTGF25H120T1G
APTGF25H120T1G – Rev 2 October , 2012
www.microsemi.com
4
7
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
60
012345678
Ic, Collector Current (A)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25°C
T
J
=125°C
0
4
8
12
16
00.511.522.533.5
Ic, Collector Current (A)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25°C
T
J
=125°C
0
20
40
60
80
02.557.51012.515
V
GE
, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0 30 60 90 120 150 180
Gate Charge (nC)
V
GE
, Gate to Emitter Voltage (V)
I
C
= 25A
T
J
= 25°C
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
7
8
9
9 10111213141516
V
GE
, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
, Collector to Emitter Voltage (V)
T
J
= 125°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
25 50 75 100 125
T
J
, Junction Temperature (°C)
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.90
0.95
1.00
1.05
1.10
25 50 75 100 125
T
J
, Junction Temperature (°C)
Collector to Emitter Breakdown Voltage
(Normalized)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
25 50 75 100 125 150
T
C
, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
