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BUK219-50Y,127

P1-P3P4-P6P7-P8
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA
Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
L
Nominal load current (ISO) 2 A
a 5 pin plastic package.
APPLICATIONS SYMBOL PARAMETER MAX. UNIT
General controller for driving V
BG
Continuous off-state supply voltage 50 V
lamps, motors, solenoids, heaters. I
L
Continuous load current 6 A
T
j
Continuous junction temperature 150 ˚C
R
ON
On-state resistance T
j
= 25˚C 180 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263B-01 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
Fig. 2. Fig. 3.
tab connected to pin 3
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
12345
MBL267
Front view
mb mb
B
G
L
I
S
HSS
TOPFET
July 2001 1 Rev 2.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
BG
Continuous supply voltage 0 50 V
I
L
Continuous load current T
mb
≤
114˚C-6A
P
D
Total power dissipation T
mb
≤
25˚C - 41 W
T
stg
Storage temperature -55 175 ˚C
T
j
Continuous junction temperature
1
- 150 ˚C
T
sold
Lead temperature during soldering - 260 ˚C
Reverse battery voltages
2
-V
BG
Continuous reverse voltage - 16 V
-V
BG
Peak reverse voltage - 32 V
Application information
R
I
, R
S
External resistors
3
to limit input, status currents 3.2 - kΩ
Input and status
I
I
, I
S
Continuous currents -5 5 mA
I
I
, I
S
Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping I
L
= 1 A, V
BG
= 16 V
E
BL
Non-repetitive clamping energy T
j
= 150˚C prior to turn-off - 75 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base - - 2.5 3 K/W
R
th j-a
Junction to ambient in free air - 60 75 K/W
1 For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
July 2001 2 Rev 2.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 10 mA 18 23 28 V
-V
LG
Negative load voltage
1
I
L
= 1 A; t
p
= 300 µs202530V
Supply voltage battery to ground
V
BG
Operating range
2
- 5.5 - 35 V
Currents 9 V ≤ V
BG
≤ 16 V
I
B
Quiescent current
3
V
LG
= 0 V - - 20 µA
T
mb
= 25˚C - 0.1 2 µA
I
L
Off-state load current
4
V
BL
= V
BG
--20µA
T
mb
= 25˚C - 0.1 1 µA
I
G
Operating current
5
I
L
= 0 A - 2 4 mA
I
L
Nominal load current
6
V
BL
= 0.5 V 2 - - A
Resistances V
BG
I
L
t
p
T
mb
R
ON
On-state resistance
7
9 to 35 V 1 A 300 µs25˚C - 135 180 mΩ
150˚C - - 330 mΩ
R
ON
On-state resistance 6 V 1 A 300 µs25˚C - 170 225 mΩ
150˚C - - 410 mΩ
R
G
Internal ground resistance I
G
= 10 mA 95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
July 2001 3 Rev 2.000
P1-P3P4-P6P7-P8

BUK219-50Y,127

Mfr. #:
Buy BUK219-50Y,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 6A SOT263
Lifecycle:
New from this manufacturer.
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