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BUK219-50Y,127

P1-P3P4-P6P7-P8
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
INPUT CHARACTERISTICS
9 V ≤ V
BG
≤ 16 V. Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
Input current V
IG
= 5 V 20 90 160 µA
V
IG
Input clamping voltage I
I
= 200 µA 5.5 7 8.5 V
V
IG(ON)
Input turn-on threshold voltage - 2.4 3 V
V
IG(OFF)
Input turn-off threshold voltage 1.5 2.1 - V
∆V
IG
Input turn-on hysteresis - 0.3 - V
I
I(ON)
Input turn-on current V
IG
= 3 V - - 100 µA
I
I(OFF)
Input turn-off current V
IG
= 1.5 V 10 - - µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
Status clamping voltage I
S
= 100 µA 5.5 7 8.5 V
V
SG
Status low voltage I
S
= 100 µA--1V
T
mb
= 25˚C - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - - 15 µA
T
mb
= 25˚C - 0.1 1 µA
I
S
Status saturation current
1
V
SG
= 5 V 2 7 12 mA
Application information
R
S
External pull-up resistor - 47 - kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typical is at T
mb
= 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V ≤ V
BG
≤ 35 V
I
L(TO)
Low current detect threshold 50 - 340 mA
T
j
= 25˚C 85 170 255 mA
∆I
L(TO)
Hysteresis - 30 - mA
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
July 2001 4 Rev 2.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2 4.2 5.5 V
∆V
BG(UV)
Hysteresis - 0.5 - V
Overvoltage
V
BG(OV)
High supply threshold voltage
2
40 45 50 V
∆V
BG(OV)
Hysteresis - 1 - V
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED LOAD
INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION
UV OV LC SC OT
L X X X X X OFF H off
H 0 0 0 0 0 ON H on & normal
H 0 0 1 0 0 ON L on & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 X OFF L SC tripped
H 0 0 0 0 1 OFF L OT shutdown
3
KEY TO ABBREVIATIONS
L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load
0 condition not present SC short circuit
1 condition present OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
July 2001 5 Rev 2.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK219-50Y
TOPFET high side switch
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ V
BG
≤ 35 V, limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection V
BL
= V
BG
I
L(lim)
Load current limiting V
BG
≥ 9 V 6 9 12 A
Short circuit load protection
V
BL(TO)
Battery load threshold voltage
1
V
BG
= 16 V 8 10 12 V
V
BG
= 35 V 15 20 25 V
t
d sc
Response time
2
V
BL
> V
BL(TO)
- 180 250 µs
Overtemperature protection
T
j(TO)
Threshold junction 150 170 190 ˚C
temperature
3
∆T
j(TO)
Hysteresis - 10 - ˚C
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, 9 V ≤ V
BG
≤ 16 V, for resistive load R
L
= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to V
IG
= 5 V
t
d on
Delay time to 10% V
L
-2840µs
dV/dt
on
Rate of rise of load voltage 30% to 70% V
L
- 0.75 1 V/µs
t
on
Total switching time to 90% V
L
-6090µs
During turn-off to V
IG
= 0 V
t
d off
Delay time to 90% V
L
-3654µs
dV/dt
off
Rate of fall of load voltage 70% to 30% V
L
- 0.75 1 V/µs
t
off
Total switching time to 10% V
L
-6090µs
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
ig
Input capacitance V
BG
= 13 V - 15 20 pF
C
bl
Output capacitance V
BL
= 13 V - 100 140 pF
C
sg
Status capacitance V
SG
= 5 V - 11 15 pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. A graph showing V
BL(TO)
versus
V
BG
will be provided in the product specification. After short circuit protection has operated, the input voltage must be toggled low for the
switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
July 2001 6 Rev 2.000
P1-P3P4-P6P7-P8

BUK219-50Y,127

Mfr. #:
Buy BUK219-50Y,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 6A SOT263
Lifecycle:
New from this manufacturer.
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