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8N4DV85EC-0076CDI8

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
IDT8N4DV75 Data Sheet LVDS DUAL-FREQUENCY PROGRAMMABLE VCXO
IDT8N4DV85CCD
REVISION B NOVEMBER 20, 2013 4 ©2013 Integrated Device Technology, Inc.
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of the product at these conditions or any conditions beyond those listed in the DC Characteristics or
AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Supply Voltage, V
CC
3.63V
Inputs, V
I
-0.5V to V
CC
+ 0.5V
Outputs, I
O
(LVDS)
Continuous Current
Surge Current
10mA
15mA
Package Thermal Impedance,
JA
49.4C/W (0 mps)
Storage Temperature, T
STG
-65C to 150C
Table 4B. Power Supply DC Characteristics, V
CC
=
2.5V ± 5%, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
CC
Power Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current 136 170 mA
DC Electrical Characteristics
Table 4C. LVCMOS/LVTTL DC Characteristic, V
CC
=
3.3V ± 5% or V
CC
=
2.5V ± 5%, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage
V
CC
= 3.3V 2 V
CC
+ 0.3 V
V
CC
= 2.5V 1.7 V
CC
+ 0.3 V
V
IL
Input Low Voltage
V
CC
= V
IN
= 3.465V -0.3 0.8 V
V
CC
= V
IN
= 2.5V -0.3 0.7 V
I
IH
Input High Current FSEL V
CC
= V
IN
= 3.465V or 2.625V 150 µA
I
IL
Input Low Current FSEL V
CC
= 3.465V or 2.625V, V
IN
= 0V -5 µA
Item Rating
Table 4A. Power Supply DC Characteristics, V
CC
=
3.3V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
CC
Power Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current 140 175 mA
Symbol Parameter
Symbol Parameter
IDT8N4DV75 Data Sheet LVDS DUAL-FREQUENCY PROGRAMMABLE VCXO
IDT8N4DV85CCD
REVISION B NOVEMBER 20, 2013 5 ©2013 Integrated Device Technology, Inc.
Table 4D. LVDS DC Characteristics, V
CC
=
3.3V ± 5%, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
OD
Differential Output Voltage 247 330 454 mV
V
OD
V
OD
Magnitude Change 50 mV
V
OS
Offset Voltage 1.14 1.23 1.31 V
V
OS
V
OS
Magnitude Change 50 mV
Table 4E. LVDS DC Characteristics, V
CC
=
2.5V ± 5%, T
A
= -40°C to 85°C
Test Conditions Minimum Typical Maximum Units
V
OD
Differential Output Voltage 247 320 454 mV
V
OD
V
OD
Magnitude Change 50 mV
V
OS
Offset Voltage 1.13 1.22 1.30 V
V
OS
V
OS
Magnitude Change 50 mV
Symbol Parameter
Symbol Parameter
IDT8N4DV75 Data Sheet LVDS DUAL-FREQUENCY PROGRAMMABLE VCXO
IDT8N4DV85CCD
REVISION B NOVEMBER 20, 2013 6 ©2013 Integrated Device Technology, Inc.
AC Electrical Characteristics
Table 5A. AC Characteristics, V
CC
=
3.3V ± 5% or V
CC
=
2.5V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
OUT
Output Frequency Q
15.476 866.67 MHz
975 1300 MHz
f
I
Initial Accuracy Measured @ 25°C, V
C
= V
CC
/2 ±10 ppm
f
S
Temperature Stability
Option code = A or B ±100 ppm
Option code = E or F ±50 ppm
Option code = K or L ±20 ppm
f
A
Aging
Frequency drift over 10 year life ±3 ppm
Frequency drift over 15 year life ±5 ppm
f
T
Total Stability
Option code A, B (10 year life) ±113 ppm
Option code E, F (10 year life) ±63 ppm
Option code K, L (10 year life) ±33 ppm
tjit(cc) Cycle-to-Cycle Jitter
NOTE 1
6 14 ps
tjit(per) RMS Period Jitter
NOTE1
4 6 ps
tjit(Ø)
RMS Phase Jitter
(Random)
NOTE 2,3
156.25MHz, Integration Range:
12kHz - 20MHz
0.47 0.71 ps
tjit(Ø)
RMS Phase Jitter
(Random)
NOTE 2,3
f
XTAL
= 114.285MHz
15.576MHz f
out
100MHz,
Integration Range:
12kHz - 20MHz
0.76 1.4 ps
100MHz < f
out
500MHz,
Integration Range:
12kHz - 20MHz
0.48 0.63 ps
500MHz < f
out
1300MHz,
Integration Range:
12kHz - 20MHz
0.46 0.67 ps
N
(100)
Single-side band phase noise,
100Hz from Carrier
156.25MHz -58 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
156.25MHz -86 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
156.25MHz -111 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
156.25MHz -117 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
156.25MHz -126 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
156.25MHz -136 dBc/Hz
PSNR Power Supply Noise Ratio
50mV Sinusoidal Noise
1kHz - 50MHz
-58.7 dBc/Hz
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 80 500 ps
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

8N4DV85EC-0076CDI8

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IC OSC VCXO DUAL FREQ 6-CLCC
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