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MCC56-18io8B

P1-P3P4-P6
MCC56-18io8B
Phase leg
Thyristor Module
3 1 2
6 5
Part number
MCC56-18io8B
Backside: isolated
TAV
T
V V1.24
RRM
60
1800
=
V
=
V
I
=
A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC56-18io8B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
I
A
V
T
1.26
R
0.45 K/W
min.
60
V
V
200T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
222 WT = 25°C
C
100
1800
forward voltage drop
total power dissipation
Unit
1.57
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
3.7
mΩ
V1.24T = °C
VJ
I = A
T
V
100
1.62
I = A200
I = A200
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
V1800T = 25°C
VJ
I
A94
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
74
junction capacitance
V = V400 T = 25°Cf = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t
T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
1.50
1.62
8.13
7.87
kA
kA
kA
kA
1.28
1.38
11.3
10.9
1800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt)
T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R =
∞; method 1 (linear voltage rise)
VJ
D
VJ
150 A
T
P
G
= 0.45
di /dt A/µs;
G
=
0.45
DRM
cr
V =
⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
D
VJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 150 V =
⅔ V
DRM
t
µs
p
= 200
non-repet., I = 60 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC56-18io8B
Ratings
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight
g81
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
V
V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCC56-18io8B 454559Box 36MCC56-18io8BStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
2.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P6

MCC56-18io8B

Mfr. #:
Buy MCC56-18io8B
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 56 Amps 1800V
Lifecycle:
New from this manufacturer.
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