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MCC56-18io8B

P1-P3P4-P6
MCC56-18io8B
3 1 2
6 5
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC56-18io8B
I
TSM
I
FSM
[A]
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
t [ms]
I
2
t
[A
2
s]
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
I
TAVM
[A]
T
C
[°C]
1500
1000
500
0
10
-3
10
-2
10
-1
10
0
10
1
T
VJ
= 45°C
T
VJ
=
125°C
50 Hz, 80% V
RRM
V
R
= 0 V
10
5
10
3
1 2 3 6 8 10
T
VJ
= 45°C
T
VJ
= 125°C
10
4
120
80
60
40
20
0
0 50 100 150
DC
180° sin
120°
60°
30°
100
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
DC
180° sin
120°
60°
30°
0 50 100 150
T
A
[°C]I
TAVM
, I
FAVM
[A]
0 20 40 60 80
150
100
50
0
P
T
[W]
R
thJA
[K/W]
0.8
1
1.2
1.5
2
2.5
3
4
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
R
thKA
[K/W]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0 50 100 150
T
A
[°C]I
dAVM
[A]
0 50 100
P
tot
[W]
100
0
200
300
400
600
Circuit
B6
3x MCC56 or
3x MCD56
500
150
I
G
[mA]
V
G
[V]
Fig. 5 Gate trigger charact.
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
5
6
10 100 1000
1
10
100
1000
Limit
typ.
T
VJ
= 25°C
I
G
[mA]
t
gd
[µs]
Fig. 7 Gate trigger delay time
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC56-18io8B
I
RMS
[A]
P
tot
[W]
T
A
[°C]
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
Circuit
W3
3x MCC56 or
3x MCD56
6
0
0
300
200
100
0
400
0 50 100 0 50 100 150
Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current
and ambient temperature
R
thJA
500
0.6
Fig. 9
T
ransient thermal impedance junction to case (per thyristor)
0.6
0.5
0.1
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.3
30°
60°
120°
180°
DC
0.2
0.4
30°
60°
120°
180°
DC
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.8
0.6
0.2
0
0.4
R
thJC
for various conduction angles d:
DC 0.450
180° 0.470
120° 0.490
60° 0.505
30° 0.520
Constants for Z
thJC
calculation:
1 0.014 0.0150
2 0.026 0.0095
3 0.410 0.1750
R
thJK
for various conduction angles d:
DC 0.650
180° 0.670
120° 0.690
60° 0.705
30° 0.720
Constants for Z
thJK
calculation:
1 0.014 0.0150
2 0.026 0.0095
3 0.410 0.1750
4 0.200 0.6700
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P6

MCC56-18io8B

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Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 56 Amps 1800V
Lifecycle:
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