OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

T1235T-6I

P1-P3P4-P6P7-P8
This is information on a product in full production.
October 2013 DocID16487 Rev3 1/8
T12T
Snubberless™, logic level and standard 12 A Triacs
Datasheet - production data
Table 1. Device summary
Features
• Medium current Triac
• High static and dynamic commutation
• Low thermal resistance with clip bonding
• Packages is RoHS (2002/95/EC) compliant
• 600 V V
RM
• UL certified (ref. file E81734)
Applications
• Value sensitive application
• General purpose ac line load switching
• Motor control circuits in power tools
• Small home appliances, lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in through-hole, the T12T series of
Triacs can be used as on/off or phase angle
control function in general purpose AC switching
where high commutation capability is required.
This series can be designed in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
Part number Symbol Value
T1210T-6I
I
GT
3Q
logic level
10 mA
T1220T-6I
T1235T-6I
I
GT
3Q
Snubberless
20 / 35 mA
T1225T-6I
I
GT
4Q
standard
25 mA
A2
G
A1
G
A2
A1
TO-220AB insulated
(T12xxT-6I)
www.st.com
Characteristics T12T
2/8 DocID16487 Rev3
1 Characteristics
Table 2. Absolute maximum ratings (limiting values; T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (full sine wave) T
c
= 88 °C 12 A
I
TSM
Non repetitive surge peak on-state current (full
cycle, T
j
initial = 25 °C)
F = 50 Hz t
p
= 20 ms 90
A
F = 60 Hz t
p
= 16.7 ms 95
I
²
tI
²
t Value for fusing t
p
= 10 ms 54 A
²
s
dI/dt
Critical rate of rise of on-state current I
G
= 2 x I
GT
t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
V
DSM
,
V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DRM
, V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
Storage junction temperature range - 40 to + 150 °C
T
j
Operating junction temperature range - 40 to + 125 °C
DocID16487 Rev3 3/8
T12T Characteristics
8
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
T12xxT
Unit
T1210T T1220T T1225T T1235T
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
I - II - III
MAX.
10 20 25 35
mA
IV 40
V
GT
V
D
= V
DRM
, R
L
= 3.3 kΩ,
T
j
= 25 °C
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ,
T
j
= 125 °C
ALL MIN. 0.2 V
I
H
(2)
I
T
= 500 mA MAX. 10 15 20 30 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
20 35 40 50
mAIV 40
II 30 40 60 80
dV/dt
(2)
V
D
= 67% V
DRM,
gate open
T
j
= 125 °C
MIN.
100 1000 100 2000
V/µs
T
j
= 150 °C
(3)
50 500 50 1000
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs
T
j
= 125 °C
MIN.
77
A/ms
(dV/dt)c = 10 V/µs 3 3
Without snubber 6 12
(dV/dt)c = 0.1 V/µs
T
j
= 150 °C
(3)
33
(dV/dt)c = 10 V/µs 1 1
Without snubber 3 10
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above T
j
max.
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
T
(1)
I
TM
= 17 A, t
p
= 380 µs T
j
= 25 °C MAX. 1.55 V
V
TO
(1)
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
D
(1)
Dynamic resistance T
j
= 125 °C MAX. 35 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 1
mA
V
D
= 0.9 x V
DRM
T
j
= 150 °C
(2)
TYP. 1.9
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above T
j
max.
P1-P3P4-P6P7-P8

T1235T-6I

Mfr. #:
Buy T1235T-6I
Manufacturer:
STMicroelectronics
Description:
Triacs Snubless logic level standard 12 A TRIACs
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet