DocID16487 Rev3 5/8
T12T Characteristics
8
Figure 7. Non repetitive surge peak on state
current for a sinusoidal
Figure 8. Relative variation of gate trigger
current and gate trigger voltage versus junction
temperature
10
100
1000
0.01 0.10 1.00 10.00
I
TSM
(A), I²t (A²s)
T
j
initial=25°C
dI/dt limitation: 50 A/µs
I
TSM
I²t
t
P
(ms)
pulse with width t < 10 ms and corresponding value of I T
p
2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
I
GT
,V
GT
[T
j
]/I
GT
,V
GT
[T
j
=25 °C]
V
GT
Q1-Q2-Q3
GT
IQ3
I
GT
Q1-Q2
T
j
(°C)
typical values
Figure 9. Relative variation of holding current
and latching current versus junction
temperature
Figure 10. Relative variation of critical rate of
decrease of main current versus (dV/dt)c
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
,I
L
[T
j
]/I
H
,I
L
[T
j
=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
,I
L
[T
j
]/I
H
,I
L
[T
j
=25 °C]
I
L
I
H
T
j
(°C)T
j
(°C)
typical values
0
1
2
3
4
5
6
7
25 50 75 100 125
dV/dt [T
j
]/dV/dt[T
j
=125 °C]
V
D
=V
R
=402 V
T
j
(°C)
typical values
Logic Level and Snubberless types
Figure 11. Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12. Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
0
1
2
3
4
5
6
7
8
25 50 75 100 125
T
j
(°C)
(dI/dt)
C
[T
j
]/(dI/dt)
c
[T
j
=125 °C]
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125
T
j
(°C)
I
DRM
/I
RRM
[Tj;V
DRM/
V
RRM
]/I
DRM
/I
RRM
[Tj=125°C;7 00V]
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=600 V
V
DRM
=200 V
RRM
=V
