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SST12LP19E-QX6E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
©2014 DS70005041D 08/14
16
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
Figure 16:Typical Schematic for 8-Contact XSON (QX8) for High-Power Applications
1423 F15.0
VCC
12 nH / 0603
0.1
µF
50
Ω
RFIN
RFOUT
50
Ω
1.0 nH
Vdet
100 pF
VREG
R1 = 0
Ω
Test conditions:
VCC = 3.3 V
VREG = 2.85 V
SST12LP19E
2X2 8L XSON
Top View
4
3
2
1
5
6
7
8
0.1
µF
0.1
µF
10
µF
100
pF
1.8
pF
©2014 DS70005041D 08/14
17
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
Figure 17:Typical Schematic for 8-Contact XSON (QX8) for High-Efficiency Applications
1423 F16.0
VCC
12 nH / 0603
0.1
µF
50
Ω
RFIN
RFOUT
50
Ω
1.0 nH
Vdet
100 pF
VREG
R1 = 300
Ω
Test conditions:
VCC = 3.3 V
VREG = 2.85 V
SST12LP19E
2X2 8L XSON
Top View
4
3
2
1
5
6
7
8
0.1
µF
0.1
µF
10
µF
100
pF
1.5
pF
©2014 DS70005041D 08/14
18
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
Figure 18:Typical Schematic for 6-Contact XSON (QX6) and 6-contact X2SON(NR) for
High-Power Applications
Figure 19:Typical Schematic for 6-Contact XSON (QX6) and 6-contact X2SON(NR) for
High-Efficiency Applications
1423 F17.0
VCC
12 nH
0.1
µF
50
Ω
RFIN
RFOUT
100 pF
50
Ω
VREG
R1 = 200
Ω
12LP19E
1.5x1.5 6L XSON
Top View
3
2
1
4
5
6
Vdet
1.0 nH
0.1
µF
0.1
µF
4.7
µF
1.8
pF
100 p
F
Test conditions:
VCC = 3.3 V
VREG = 2.85 V
1423 F18.0
VCC
12 nH
0.1
µF
50
Ω
RFIN
RFOUT
100 pF
50
Ω
VREG
R1 = 360
Ω
3
2
1
4
5
6
Vdet
1.0 nH
0.1
µF
0.1
µF
4.7
µF
1.5
pF
12LP19E
1.5x1.5 6L XSON
Top View
100 p
F
Test conditions:
VCC = 3.3 V
VREG = 2.85 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

SST12LP19E-QX6E

Mfr. #:
Buy SST12LP19E-QX6E
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11b/g/n PA Low Current
Lifecycle:
New from this manufacturer.
Delivery:
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