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SI7872DP-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si7872DP
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
• Halogen-free Option Available
• LITTLE FOOT
®
Plus Schottky
• PWM Optimized
• New Low Thermal Resistance PowerPAK
®
Package with low 1.07 mm Profile
APPLICATIONS
• Asymmetrical Buck-Boost DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
Channel-1
30
0.022 at V
GS
= 10 V 10
0.030 at V
GS
= 4.5 V 8
Channel-2
0.022 at V
GS
= 10 V 10
0.028 at V
GS
= 4.5 V 8
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V at 1.0 A 3.0
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerP AK
®
SO-8
Si7872DP-T1-GE3 (Lead (Pb)-free and Halogen-
f
Si7872DP-T1-E3 (Lead (Pb)-free)
Ordering Information:
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
Schottky Diode
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol
10 s Steady State
Unit
Channel-1 Channel-2 Channel-1 Channel-2
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20 ± 12 ± 20 ± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
10 6.4
A
T
A
= 70 °C 7 5.1
Pulsed Drain Current I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
2.9 1.1
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.4
W
T
A
= 70 °C 2.2 0.9
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol
MOSFET Schottky
Unit
Typical Maximum Typical Maximum
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
26 35 26 35
°C/W
Steady State 60 85 60 85
Maximum Junction-to-Case (Drain) Steady State R
thJC
4.1 6.0 4.1 6.0
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
Vishay Siliconix
Si7872DP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Min. Typ.
b
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Ch-1 1.0 3.0
V
Ch-2 0.8 2.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
Ch-1 ± 100
nA
V
DS
= 0 V, V
GS
= ± 12 V
Ch-2 ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 1
µA
Ch-2 100
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
Ch-1 15
Ch-2 2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
Ch-1 20
A
Ch-2 20
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 7.5 A
Ch-1 0.017 0.022
Ω
Ch-2 0.016 0.022
V
GS
= 4.5 V, I
D
= 6.5 A
Ch-1 0.024 0.030
Ch-2 0.020 0.028
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.5 A
Ch-1 19
S
Ch-2 21
Diode Forward Voltage
b
V
SD
I
S
= 1 A, V
GS
= 0 V
Ch-1 0.75 1.2
V
Ch-2 0.47 0.5
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.5 A
Ch-1 7 11
nC
Ch-2 11.5 18
Gate-Source Charge
Q
gs
Ch-1 2.9
Ch-2 3.8
Gate-Drain Charge
Q
gd
Ch-1 2.5
Ch-2 3.5
Gate Resistance
R
G
Ch-1 1.5
Ω
Ch-2 1.8
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
G
= 6 Ω
Ch-1 9 15
ns
Ch-2 12 20
Rise Time
t
r
Ch-1 10 17
Ch-2 10 17
Turn-Off Delay Time
t
d(off)
Ch-1 19 30
Ch-2 40 66
Fall Time
t
f
Ch-1 9 15
Ch-2 9 15
Source-Drain Reverse Recovery
Time
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
Ch-1 35 55
Ch-2 28 45
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47 0.50
V
I
F
= 1.0 A, T
J
= 125 °C
0.36 0.42
Maximum Reverse Leakage Current
I
rm
V
r
= 30 V
0.004 0.100
mA
V
r
= 30 V, T
J
= 100 °C
0.7 10
V
r
= – 30 V, T
J
= 125 °C
3.0 20
Junction Capacitance
C
T
V
r
= 10 V
50
pF
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
3
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0246810
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
R
DS(on)
0.000
0.010
0.020
0.030
0.040
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 15 V
I
D
= 7.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
01234
5
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage
(V )
- Drain Current (A)I
D
0
240
480
720
960
1200
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0255075100 125 150
V
GS
= 10 V
I
D
= 7.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
P1-P3P4-P6P7-P9P10-P10

SI7872DP-T1-GE3

Mfr. #:
Buy SI7872DP-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 10A 3.5W 22mohm @ 10V
Lifecycle:
New from this manufacturer.
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