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SI7872DP-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
7
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.3
0.6 0.9
1.2
1.5
T
J
= 150 °C
T
J
= 25 °C
20
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0255075100 125 150
I
D
= 250 μA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0246810
I
D
= 7.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
60
100
20
40
Power (W)
Time (s)
80
11010
-1
10
-2
10
-3
Safe Operating Area, Junction-to-Foot
100
1
0.1 1 10
100
0.01
10
0.1
100 ms
1 s
10 s
DC
10 ms
1 ms
T
C
= 25 °C
Single Pulse
I
DM
Limited
I
D(on)
Limited
BV
DSS
Limited
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)
Limited by R
DS(on)
*
www.vishay.com
8
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
Normalized Ef fective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-1
110
-5
2
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
10
-3
10
-4
1
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
9
Vishay Siliconix
Si7872DP
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72035.
Reverse Current vs. Junction Temperature
0 25 50 75 100 125 150
20
10
0.0001
- Reverse Current (mA)I
R
T
J
- Temperature (°C)
30 V
24 V
0.001
0.01
0.1
1
Forward Voltage Drop
0.0 0.3 0.6 0.9 1.2 1.5
10
1
- Forward Current (A)I
F
V
F
- Forward Voltage Drop (V )
T
J
= 150 °C
T
J
= 25 °C
Capacitance
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
40
80
120
160
200
0 6 12 18 24 30
C
oss
P1-P3P4-P6P7-P9P10-P10

SI7872DP-T1-GE3

Mfr. #:
Buy SI7872DP-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 10A 3.5W 22mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
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