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IRFB3206PBF

P1-P3P4-P6P7-P9P10-P12
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0 10 20 30 40 50 60
V
DS,
Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
E
n
e
r
g
y
(
μ
J
)
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
55
60
65
70
75
80
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
D
= 5mA
0.1 1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
40
80
120
160
200
240
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 21A
33A
BOTTOM 120A
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
40
80
120
160
200
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 120A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Ri (°C/W)
τι
(sec)
0.106416 0.0001
0.201878 0.001262
0.190923 0.011922
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= τi/Ri
Ci= τi/Ri
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage Vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250μA
ID = 150μA
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
2
4
6
8
10
12
14
16
18
I
R
R
M
-
(
A
)
I
F
= 45A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
50
100
150
200
250
300
350
Q
R
R
-
(
n
C
)
I
F
= 30A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
50
100
150
200
250
300
350
Q
R
R
-
(
n
C
)
I
F
= 45A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
2
4
6
8
10
12
14
16
18
I
R
R
M
-
(
A
)
I
F
= 30A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
P1-P3P4-P6P7-P9P10-P12

IRFB3206PBF

Mfr. #:
Buy IRFB3206PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 60V 210A 3mOhm 120nC Qg
Lifecycle:
New from this manufacturer.
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