FERD2045SB-TR Datasheet FERD2045SB-TR | P1-P3

January 2018

DocID031305 Rev 1

1/8

This is information on a product in full production.

www.st.com

FERD2045S

45 V field-effect rectifier diode

Datasheet - production data

Features

 ST advanced rectifier process

 Stable leakage current over reverse voltage

 Low forward voltage drop

 High frequency operation

 ECOPACK

®

2 compliant component for

DPAK on demand

Description

This single rectifier is based on a proprietary

technology that achieves the best in class V

F

/I

R

trade-off for a given silicon surface.

Therefore it can advantageously replace 45 V low

voltage Schottky diodes.

Packaged in DPAK, this device is intended to be

used in rectification and freewheeling operations

in power supplies.

Table 1: Device summary

Symbol

Value

I

F(AV)

20 A

V

RRM

45 V

V

F

(typ.)

0.29 V

T

j

(max.)

150 °C

K

A

K

A

DPAK

Characteristics

FERD2045S

2/8

DocID031305 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode

terminals short-circuited)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

45

V

I

F(RMS)

Forward rms current

40

A

I

F(AV)

Average forward current δ = 0.5, square

wave

T

C

= 125 °C

20

A

I

FSM

Surge non repetitive forward current

t

p

= 10 ms sinusoidal

180

A

T

stg

Storage temperature range

-65 to +175

°C

T

j

Maximum operating junction temperature range

(1)

-40 to +150

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Value

Unit

R

th(j-c)

Junction to case

1.4

°C/W

Table 4: Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= 35 V

-

100

300

µA

T

j

= 125 °C

-

12

24

mA

T

j

= 25 °C

V

R

= V

RRM

-

200

600

µA

T

j

= 125 °C

-

18

40

mA

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 5 A

-

0.35

V

T

j

= 125 °C

-

0.29

T

j

= 25 °C

I

F

= 10 A

-

0.41

0.45

T

j

= 125 °C

-

0.38

0.42

T

j

= 25 °C

I

F

= 20 A

-

0.51

0.55

T

j

= 125 °C

-

0.52

0.57

Notes:

(1)

Pulse test: t

p

= 5 ms, δ < 2%

(2)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 0.27 x I

F(AV)

+ 0.015 x I

F

2

(RMS)

FERD2045S

Characteristics

DocID031305 Rev 1

3/8

1.1 Characteristics (curves)

Figure 1: Average forward current versus ambient

temperature (δ = 0.5)

Figure 2: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 3: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

Figure 5: Forward voltage drop versus forward

current (typical values)

Figure 6: Forward voltage drop versus forward

current (typical values)

0

5

10

15

20

25

30

0 25 50 75 100 125 150

T

amb

(°C)

I

F(AV)

(A)

R

th(j-a)

= R

th(j-c)

T

δ

=tp/T

tp

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t

p

(s)

Z

th(j-c)

/R

th(j-c)

Single pulse

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 5 10 15 20 25 30 35 40 45

V

R

(V)

I

R

(mA)

T

j

= 125 °C

T

j

= 25 °C

T

j

= 50 °C

T

j

= 75 °C

T

j

= 100 °C

T

j

= 150 °C

100

1000

10000

1 10 100

V

R

(V)

C(pF)

F = 1 MHz

V

osc

= 30 mV

RMS

T

j

= 25 °C

FERD2045SB-TR

FERD2045SB-TR

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