IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTL2N450
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 60V, I
D
= 0.5 • I
D25
, Note 1 2.1 3.5 S
C
iss
6860 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 267 pF
C
rss
105 pF
R
Gi
Integrated Gate Input Resistance 4.0
t
d(on)
40 ns
t
r
34 ns
t
d(off)
123 ns
t
f
205 ns
Q
g(on)
180 nC
Q
gs
V
GS
= 10V, V
DS
= 1kV, I
D
= 0.5 • I
D25
34 nC
Q
gd
83 nC
R
thJC
0.56 C/W
R
thCS
0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 2 A
I
SM
Repetitive, Pulse Width Limited by T
JM
8 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 3 V
t
rr
I
F
= 2A, -di/dt = 100A/μs, V
R
= 100V 1.75 μs
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2. Part must be heatsunk for high-temp Idss measurement.
Resistive Switching Times
V
GS
= 10V, V
DS
= 1kV, I
D
= 1A
R
G
= 0 (External)
ISOPLUS i5-Pak
TM
(IXTL) Outline
1 = Gate
2 = Source
3 = Drain
4 = Isolated
R
D
R1
E Q
Q1
L
L1
c
e1
b1
b2
e
U
T
S
A2
A
4
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