IXTL2N450

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IXTL2N450
Fig. 7. Transconductance
0
1
2
3
4
5
6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 1000V
I
D
= 1A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f = 1 MHz
C
iss
C
rss
C
oss
Fig. 11. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(
on
)
Limit
1s
10ms
100ms
DC
Fig. 12. Resistive Switching Times vs.
External Gate Resistance
0
50
100
150
200
250
300
012345678910
R
G(ext)
- Ohms
Switching Times - Nanosecond
s
t
f
t
r
t
d(off)
t
d(on)
V
DS
= 1kV, V
GS
= 10V
I
D
= 1A, T
J
= 25ºC
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IXYS REF: T_2N450(H9-P640) 9-24-13
IXTL2N450
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W

IXTL2N450

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 4500V 2A HV Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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