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MC33151DR2G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 9
1 Publication Order Number:
MC34151/D
MC34151, MC33151
High Speed Dual
MOSFET Drivers
The MC34151/MC33151 are dual inverting high speed drivers
specifically designed for applications that require low current digital
circuitry to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS and LSTTL
logic compatible, input hysteresis for fast output switching that is
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is
an undervoltage lockout with hysteresis to prevent erratic system
operation at low supply voltages.
Typical applications include switching power supplies, dc to dc
converters, capacitor charge pump voltage doublers/inverters, and
motor controllers.
These devices are available in dual−in−line and surface mount
packages.
Features
• Two Independent Channels with 1.5 A Totem Pole Output
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
• Pin Out Equivalent to DS0026 and MMH0026
• These are Pb−Free and Halide−Free Devices
Figure 1. Representative Block Diagram
+
+
+
-
V
CC
6
5.7V
Logic Input A
2
Logic Input B
4
GND
3
100k
Drive Output A
7
Drive Output B
5
+
+
+
+
100k
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
PDIP−8
P SUFFIX
CASE 626
MARKING
DIAGRAMS
1
8
1
8
MC3x151P
AWL
YYWWG
SOIC−8
D SUFFIX
CASE 751
1
8
x = 3 or 4
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
PIN CONNECTIONS
1 8 N.C.N.C.
(Top View)
2 7 Drive Output ALogic Input A
36V
CC
GND
4 5 Drive Output BLogic Input B
3151V
ALYWG
G
1
8
(Note: Microdot may be in either location)
3x151
ALYWG
G
1
8
MC3x151 MC33151V
MC34151, MC33151
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
CC
20 V
Logic Inputs (Note 1) V
in
−0.3 to V
CC
V
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V
CC
)
I
O
I
O(clamp)
1.5
1.0
A
Power Dissipation and Thermal Characteristics
D Suffix SOIC−8 Package Case 751
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P Suffix 8−Pin Package Case 626
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P
D
R
q
JA
P
D
R
q
JA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature
MC34151
MC33151
MC33151V
T
A
0 to +70
−40 to +85
−40 to +125
°C
Storage Temperature Range T
stg
−65 to +150 °C
Electrostatic Discharge Sensitivity (ESD) (Note 3)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
200
1500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V
CC
, whichever is less.
2. Maximum package power dissipation limits must be observed.
3. ESD protection per JEDEC Standard JESD22−A114−F for HBM
per JEDEC Standard JESD22−A115−A for MM
per JEDEC Standard JESD22−C101D for CDM.
MC34151, MC33151
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, for typical values T
A
= 25°C, for min/max values T
A
is the only operating
ambient temperature range that applies [Note 3], unless otherwise noted.)
Characteristics
Symbol Min Typ Max Unit
LOGIC INPUTS
Input Threshold Voltage − Output Transition High to Low State
Output Transition Low to High State
V
IH
V
IL
−
0.8
1.75
1.58
2.6
−
V
Input Current − High State (V
IH
= 2.6 V)
Input Current − Low State (V
IL
= 0.8 V)
I
IH
I
IL
−
−
200
20
500
100
mA
DRIVE OUTPUT
Output Voltage − Low State (I
Sink
= 10 mA)
Output Voltage − Low State (I
Sink
= 50 mA)
Output Voltage − Low State (I
Sink
= 400 mA)
Output Voltage − High State (I
Source
= 10 mA)
Output Voltage − High State (I
Source
= 50 mA)
Output Voltage − High State (I
Source
= 400 mA)
V
OL
V
OH
−
−
−
10.5
10.4
9.5
0.8
1.1
1.7
11.2
11.1
10.9
1.2
1.5
2.5
−
−
−
V
Output Pulldown Resistor R
PD
− 100 −
kW
SWITCHING CHARACTERISTICS (T
A
= 25°C)
Propagation Delay (10% Input to 10% Output, C
L
= 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
t
PLH(in/out)
t
PHL(in/out)
−
−
35
36
100
100
ns
Drive Output Rise Time (10% to 90%) C
L
= 1.0 nF
Drive Output Rise Time (10% to 90%) C
L
= 2.5 nF
t
r
−
−
14
31
30
−
ns
Drive Output Fall Time (90% to 10%) C
L
= 1.0 nF
Drive Output Fall Time (90% to 10%) C
L
= 2.5 nF
t
f
−
−
16
32
30
−
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C
L
= 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
I
CC
−
−
6.0
10.5
10
15
mA
Operating Voltage V
CC
6.5 − 18 V
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V
CC
, whichever is less.
2. Maximum package power dissipation limits must be observed.
3. T
low
=0°C for MC34151 T
high
= +70°C for MC34151
−40°C for MC33151 +85°C for MC33151
P1-P3P4-P6P7-P9P10-P12

MC33151DR2G

Mfr. #:
Buy MC33151DR2G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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