March 2007 Rev 6 1/12
12
STP60NF06
N-channel 60V - 0.014 - 60A TO-220
STripFET II™ Power MOSFET
General features
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP60NF06 60V <0.016 60A
TO-220
1
2
3
www.st.com
Order code
Part number Marking Package Packaging
STP60NF06 P60NF06 TO-220 Tube
Contents STP60NF06
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP60NF06 Electrical ratings
3/12
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 60 V
V
GS
Gate- source voltage ±20 V
I
D
Drain current (continuos) at T
C
= 25°C 60 A
I
D
Drain current (continuos) at T
C
= 100°C 42 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 240 A
P
TOT
Total dissipation at T
C
= 25°C 110 W
Derating factor 0.74 W/°C
dv/dt
(2)
2. I
SD
60A, di/dt 400 A/µs, V
DD
48V, Tj T
jmax
Peak diode recovery voltage slope 7.5 V/ns
T
stg
Storage temperature
– 55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1.36 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
30 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=30V)
370 mJ

STP60NF06

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 60 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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