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STP60NF06

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STP60NF06
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 µA, V
GS
= 0 60 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 1 µA
V
DS
=Max rating, T
C
=125°C 10 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 30A 0.014 0.016 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 15V
,
I
D
=30A 50 S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1660 pF
C
oss
Output capacitance 400 pF
C
rss
Reverse transfer
capacitance
140 pF
Q
g
Total gate charge
V
DD
= 30V, I
D
= 60A,
V
GS
= 10V
(see Figure 12)
54 73 nC
Q
gs
Gate-source charge 9 nC
Q
gd
Gate-drain charge 23 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 30V, I
D
= 30A
R
G
=4.7Ω V
GS
= 10V
(see Figure 11)
15
65
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 30V, I
D
= 30A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 11)
45
20
ns
ns
STP60NF06 Electrical characteristics
5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 60 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) 240 A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 60A, V
GS
= 0 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 60A, V
DD
=30V
di/dt = 100A/µs, Tj = 150°C
(see Figure 13)
70
185
5
ns
nC
A
Electrical characteristics STP60NF06
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Source-drain diode forward
characteristics
Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STP60NF06

Mfr. #:
Buy STP60NF06
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 60 Amp
Lifecycle:
New from this manufacturer.
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