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MJD200

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 13
1 Publication Order Number:
MJD200/D
MJD200 (NPN),
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Base Voltage V
CB
40 Vdc
Collector−Emitter Voltage V
CEO
25 Vdc
Emitter−Base Voltage V
EB
8.0 Vdc
Collector Current − Continuous I
C
5.0 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
12.5
0.1
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.4
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 1 or 0
G = Pb−Free Package
AYWW
J2x0G
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
1
BASE
3
EMITTER
COLLECTOR
2,4
1
2
3
4
1
BASE
3
EMITTER
COLLECTOR
2,4
PNP NPN
MJD200 (NPN), MJD210 (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
10 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
89.3 °C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
25 −
Vdc
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 40 Vdc, I
E
= 0, T
J
= 125°C)
V
CBO
−
−
100
100
nAdc
mAdc
Emitter Cutoff Current
(V
BE
= 8 Vdc, I
C
= 0)
V
EBO
− 100
nAdc
ON CHARACTERISTICS
C Current Gain (Note 3),
(I
C
= 500 mAdc, V
CE
= 1 Vdc)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
(I
C
= 5 Adc, V
CE
= 2 Vdc)
h
FE
70
45
10
−
180
−
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 2 Adc, I
B
= 200 mAdc)
(I
C
= 5 Adc, I
B
= 1 Adc)
V
CE(sat)
−
−
−
0.3
0.75
1.8
Vdc
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 5 Adc, I
B
= 1 Adc)
V
BE(sat)
− 2.5
Vdc
Base−Emitter On Voltage (Note 3)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
V
BE(on)
− 1.6
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
65 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJD200
MJD210, NJVMJD210T4G
C
ob
−
−
80
120
pF
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. f
T
= ⎪h
fe
⎪• f
test
.
MJD200 (NPN), MJD210 (PNP)
http://onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
15
10
T
C
5
20
P
D
, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
2.5
0
1.5
1
T
A
0.5
2
+11 V
25 ms
0
-9 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
51
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
T
C
T
A
(SURFACE MOUNT)
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
10K
I
C
, COLLECTOR CURRENT (A)
10
5K
3K
2K
1K
500
300
200
100
50
1K
I
C
, COLLECTOR CURRENT (A)
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
500
300
200
100
50
t
d
30
20
10
5
1
0.01 0.03 0.05 0.50.2
0.02
0.1 0.3 10
Figure 3. Turn−On Time Figure 4. Turn−Off Time
t, TIME (ns)
3
2
5213
t
r
MJD200
MJD210
30
20
0.01 0.03 0.05 0.50.2
0.02
0.1 0.3 105213
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
MJD200
MJD210
P1-P3P4-P6P7-P7

MJD200

Mfr. #:
Buy MJD200
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 25V 5A DPAK
Lifecycle:
New from this manufacturer.
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