MJD200 (NPN), MJD210 (PNP)
http://onsemi.com
5
t, TIME (ms)
0.01
0.02 0.05 1 2 5 10 20 50 100 2000.1 0.50.2
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
R
q
JC
(t) = r(t) q
JC
R
q
JC
= 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
0 (SINGLE PULSE)
RESISTANCE (NORMALIZED)
Figure 8. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
0.01
30
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
Figure 9. Active Region Safe Operating Area
500ms
dc
1
3
1ms
2010753210.3
100ms
T
J
= 150°C
I
C
, COLLECTOR CURRENT (AMP)
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150°C. T
J(pk)
may be calculated from the data in Figure 8.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
V
R
, REVERSE VOLTAGE (V)
20
40
70
100
30
Figure 10. Capacitance
50
201064210.4
C, CAPACITANCE (pF)
0.6
T
J
= 25°C
MJD200 (NPN)
MJD210 (PNP)
C
ob
C
ib
