FDZ208P Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–30
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–20
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –24 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage Current,
Forward
V
GS
= –25 V, V
DS
= 0 V –100
nA
I
GSSR
Gate–Body Leakage Current,
Reverse
V
GS
= 25 V, V
DS
= 0 V 100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–1 –1.5
–3
V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V, I
D
= –12.5 A
V
GS
= –4.5 V, I
D
= –9.5 A
V
GS
= –10 V,I
D
= –12.5A,T
J
=125°C
9
13
11.7
10.5
16.5
15
mΩ
g
FS
Forward Transconductance V
DS
= –10 V, I
D
= –12.5 A 40 S
Dynamic Characteristics
C
iss
Input Capacitance 2409
pF
C
oss
Output Capacitance 614
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
300
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 13 24
ns
t
r
Turn–On Rise Time 11 21
ns
t
d(off)
Turn–Off Delay Time 74 119
ns
t
f
Turn–Off Fall Time
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6 Ω
42 68
ns
Q
g
Total Gate Charge 25 35
nC
Q
gs
Gate–Source Charge 5 nC
Q
gd
Gate–Drain Charge
V
DS
= –15 V, I
D
= –12.5 A,
V
GS
= –5 V
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.8
A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.8 A
(Note 2)
–0.7
–1.2
V
t
rr
Diode Reverse Recovery Time 29.5
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= -12.5 A,
di/dt = 100 A/µs
30.2
nC
Notes: 1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
junction to the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of
the copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a) 56°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ208P P-Channel 30 Volt PowerTrench
BGA MOSFET
