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FDZ208P

P1-P3P4-P5
FDZ208P Rev D (W)
Typical Characteristics
0
15
30
45
60
0 0.5 1 1.5 2 2.5 3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-3.0V
-3.5V
-4.5V
V
GS
=-10V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 15 30 45 60
-I
D
, DRAIN CURRENT (A)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5V
-6.0V
-5.0V
-10V
-4.5V
-8.0V
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -12.5A
V
GS
= -10V
0.005
0.015
0.025
0.035
0.045
2 4 6 8 10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
, ON-RESISTANCE (OHM)
I
D
= -12.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
1 1.5 2 2.5 3 3.5 4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ208P P-Channel 30 Volt PowerTrench
BGA MOSFET
FDZ208P Rev D (W)
Typical Characteristics
0
2
4
6
8
10
0 10 20 30 40 50
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -12.5A
V
DS
= -10V
-20V
-15V
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
r
DS(on)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 119
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
10
20
30
40
0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 119°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.0001
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θ
JA
= 119 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ208P P-Channel 30 Volt PowerTrench
BGA MOSFET
P1-P3P4-P5

FDZ208P

Mfr. #:
Buy FDZ208P
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V/25V PCh MOSFET BGa
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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