VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
Revision: 11-Apr-14
2
Document Number: 94513
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
135 140 160 A
85 85 85 °C
Maximum RMS on-state current I
T(RMS)
As AC switch 300 310 355
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
3200 4500 4870
t = 8.3 ms 3360 4712 5100
t = 10 ms
100 % V
RRM
reapplied
2700 3785 4100
t = 8.3 ms 2800 3963 4300
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
51.5 102 119
kA
2
s
t = 8.3 ms 47 92.5 108
t = 10 ms
100 % V
RRM
reapplied
36.5 71.6 84
t = 8.3 ms 33.3 65.4 76.7
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
maximum 0.86 0.83 0.8
V
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
maximum 1.05 1 0.98
Low level value on-state
slope resistance
r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
maximum 2.02 1.78 1.67
m
High level value on-state
slope resistance
r
t2
(I > x I
T(AV)
), T
J
maximum 1.65 1.43 1.38
Maximum on-state voltage drop V
TM
I
TM
= x I
T(AV)
, T
J
= 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum forward voltage drop V
FM
I
TM
= x I
T(AV)
, T
J
= 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum holding current I
H
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C 200
mA
Maximum latching current I
L
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
gd
T
J
= 25 °C
Gate current = 1 A, dl
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
1
μs
Typical rise time t
gr
2
Typical turn-off time t
q
I
TM
= 300 A, - dl/dt = 15 A/μs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
50 to 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= 125 °C 50 mA
RMS insulation voltage V
INS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500 V
Critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
1000 V/μs
