VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
Revision: 11-Apr-14
10
Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 28 - On-State Voltage Drop Characteristics
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 30 - On-State Voltage Drop Characteristics
Fig. 31 - Thermal Impedance Z
thJC
Characteristics
Fig. 32 - Thermal Impedance Z
thJC
Characteristics
Fig. 33 - Thermal Impedance Z
thJC
Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.136.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 125˚C
T = 25˚C
VSK.142.. Series
Per Junction
J
J
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.162.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
0
.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.136.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.142.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.162.. Series
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
11
Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3)
(2) (1)
Instantaneous Gate Voltage (V)
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
a)Recommended load line for
b)Re com m end e d loa d line for
VGD
IG D
(1) PGM = 200 W , tp = 300 s
(2) PGM = 60 W, tp = 1 m s
(3) PGM = 30 W, tp = 2 m s
(4) PGM = 12 W, tp = 5 m s
<= 30% rated dI/dt: 15 V, 40 W
tr = 1 s, tp >= 6 s
rated dI/dt: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
VSK.136..142..162.. Series
Frequency Limited by PG(AV)
Instantan eous Gate Current (A)
1
2
- Circuit configuration
3
- Current rating: I
T(AV)
4
- Voltage code x 100 = V
RRM
5
- PbF = Lead (Pb)-free
Device code
51 32 4
VS-VS 16 PbFKT 162
- Vishay Semiconductors product
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
12
Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Two SCRs doubler circuit T
SCR/diode doubler circuit, positive control H
SCR/diode doubler circuit, negative control L
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95067
-
+
~
K1 K2
G1 G2
-
+
VSKT...
-
+
~
K1
G1
-
+
VSKH...
-
+
VSKL...
-
+
~
K2
G2

VS-VSKT162/16PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1600 Volt 160 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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