1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 24.4 dB at 2150 MHz
Output power at 1 dB gain compression = 5 dBm at 2150 MHz
Supply current = 20.0 mA at a supply voltage of 3.3 V
Reverse isolation > 39 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.9 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2817
MMIC wideband amplifier
Rev. 7 — 30 March 2017 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN

V\P

BGA2817 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 30 March 2017 2 of 13
NXP Semiconductors
BGA2817
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2817 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2817 LS* * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +5.0 V
I
CC
supply current - 55 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - 10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.0 3.3 3.6 V
I
CC
supply current 17.6 20.0 22.2 mA
BGA2817 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 30 March 2017 3 of 13
NXP Semiconductors
BGA2817
MMIC wideband amplifier
G
p
power gain f = 250 MHz 23.6 24.2 24.8 dB
f = 950 MHz 23.5 24.3 25 dB
f = 2150 MHz 23 24.4 25.9 dB
RL
in
input return loss f = 250 MHz 13 15 - dB
f = 950 MHz 1618- dB
f = 2150 MHz 13 20 - dB
RL
out
output return loss f = 250 MHz 12 17 - dB
f = 950 MHz 1617- dB
f = 2150 MHz 17 20 - dB
ISL isolation f = 250 MHz 36 57 - dB
f = 950 MHz 4749- dB
f = 2150 MHz 37 39 - dB
NF noise figure f = 250 MHz - 3.9 4.4 dB
f = 950 MHz - 3.9 4.3 dB
f = 2150 MHz - 3.8 4.2 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 3.3 3.5 3.7 GHz
K Rollett stability factor f = 250 MHz 10 21 -
f = 950 MHz 7 9 -
f = 2150 MHz 1.5 2.7 -
P
L(sat)
saturated output power f = 250 MHz 8 8 - dBm
f = 950 MHz 5 7 - dBm
f = 2150 MHz 5 6 - dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 6 6 - dBm
f = 950 MHz 5 6 - dBm
f = 2150 MHz 4 5 - dBm
IP3
I
input third-order intercept point P
drive
= 40 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 9 7- dBm
f
1
= 950 MHz; f
2
= 951 MHz 9 7- dBm
f
1
=2150MHz; f
2
=2151MHz 13 10 - dBm
IP3
O
output third-order intercept point P
drive
= 40 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 1618- dBm
f
1
= 950 MHz; f
2
=951MHz 1618- dBm
f
1
=2150MHz; f
2
= 2151 MHz 12.5 15.5 - dBm
P
L(2H)
second harmonic output power P
drive
= 28 dBm
f
1H
= 250 MHz; f
2H
=500MHz - 53 51 dBm
f
1H
= 950 MHz; f
2H
=1900MHz - 45 41 dBm
IM2 second-order intermodulation distance P
drive
= 31 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 3436- dBc
f
1
= 950 MHz; f
2
=951MHz 3339- dBc
Table 6. Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2817,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier MMIC wideband amp amplifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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