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TLP109(V4-TPL,E

P1-P3P4-P6P7-P9P10-P11
TLP109(IGM)
2014-09-01
1
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP109(IGM)
Intelligent Power Module (IPM)
Digital Logic Isolation
Industrial Inverters
The Toshiba TLP109(IGM) mini-flat coupler is a small-outline coupler
suitable for surface-mount assembly.
The TLP109(IGM) consists of a high-output-power GaAℓAs light emitting
diode optically coupled to a high-speed photodiode-transistor chip.
The TLP109(IGM) is housed in the SO6 package and guarantees a
creepage distance of ≥ 5.0 mm, a clearance of ≥ 5.0 mm and an insulation
thickness of ≥ 0.4 mm. Therefore, the TLP109(IGM) meets the reinforced
insulation class requirements of international safety standards.
The TLP109(IGM) guarantees minimum and maximum of propagation
delay time, switching time dispersion, and high common mode transient
immunity. Therefore TLP109(IGM) is suitable for isolation interface
between IPM(Intelligent Power Module) and control IC circuits in motor
control application.
• Isolation voltage: 3750 Vrms (min)
• Common mode transient immunity: ±10 kV/μs (min)
@V
CM
=1500 V Pin Configuration (Top View)
• Switching time: t
pHL,
t
pLH
=0.1 μs (min)
=0.8 μs (max)
@I
F
=10 mA, V
CC
=15 V,
R
L
=20 kΩ, Ta=25°C
• Switching time dispersion: 0.7 μs (max)
(|t
pLH
−t
pHL
|)
• TTL compatible
• UL approved :UL1577, File No.E67349
• c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Schematic
• Option (V4)
VDE approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage :
707 V
PK
Highest Permissible Over Voltage
: 6000 V
PK
(Note) : When a EN60747-5-2 approved type is needed,
Please designate “Option(V4)”
• Construction Mechanical Ratings
Creepage distance: 5.0 mm (min)
Clearance distance: 5.0 mm (min)
Insulation thickness: 0.4 mm (min)
TOSHIBA 11−4L1
Weight: 0.08 g (typ.)
Unit: mm
1: ANODE
3: CATHODE
4: EMITTER (GND)
5: COLLECTOR (OUTPUT)
6: V
CC
V
CC
GND
V
O
I
CC
I
O
6
5
4
3
I
F
V
F
SHIELD
1
0.1
2.1 ± 0.1
4.55
1
3
6
5
4
3.7
7.0 ± 0.4
0.4
2.54
1.27
0.5 min
0.15
+0.25
-0.15
+0.25
-0.15
Start of commercial production
2010/10
TLP109(IGM)
2014-09-01
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current (Note 1) I
F
20 mA
Pulse forward current (Note 2) I
FP
40 mA
Peak transient forward current (Note 3) I
FPT
1 A
Reverse voltage V
R
5 V
Detector
Output current I
O
8 mA
Peak output current I
OP
16 mA
Supply voltage V
CC
−0.5 to 30 V
Output voltage V
O
−0.5 to 20 V
Output power dissipation (Note 4) P
O
100 mW
Operating temperature range T
opr
−55 to 125
°C
Storage temperature range T
stg
−55 to 125
°C
Lead solder temperature (10 sec.) T
sol
260
°C
Isolation Voltage
(AC, 1 minute, R.H.≤ 60%) (Note 5)
BV
S
3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1) Derate 0.36 mA / °C above 95°C.
(Note 2) 50% duty cycle, 1 ms pulse width. Derate 0.72 mA / °C above 95°C.
(Note 3) Pulse width ≤ 1 μs, 300 pps.
(Note 4) Derate 1.8 mW / °C above 95°C.
(Note 5) Device considered a two−terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
TLP109(IGM)
2014-09-01
3
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage V
F
I
F
= 16 mA 1.50 1.64 1.85 V
Forward voltage
temperature coefficient
∆V
F
/ ∆Ta I
F
= 16 mA
―
−1.8
―
mV /°C
Reverse current I
R
V
R
= 3 V
― ―
10 μA
Capacitance between terminals C
T
V
F
= 0 V, f = 1 MHz
―
60
―
pF
Detector
High level output current
I
OH (1)
I
F
= 0 mA, V
CC
= V
O
= 5.5 V
―
3 500 nA
I
OH (2)
I
F
= 0 mA, V
CC
= 30 V, V
O
= 20 V
― ―
5
μA
I
OH
I
F
= 0 mA, V
CC
= 30 V, V
O
= 20 V,
Ta = 100°C
― ―
50
High level supply current I
CCH
I
F
= 0 mA, V
CC
= 30 V
―
0.01 1 μA
Supply voltage V
CC
I
CC
= 0.01 mA 30
― ―
V
Output voltage V
O
I
O
= 0.5 mA
20 ―
― V
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio I
O
/ I
F
I
F
= 10 mA, V
CC
= 4.5 V
V
O
= 0.4 V
25 35 75
%
I
F
= 10 mA, V
CC
= 4.5 V
V
O
= 0.4 V, Ta = −25 to 100 °C
15 ― ―
Low level output voltage V
OL
I
F
= 16 mA, V
CC
= 4.5 V
I
O
= 2.4 mA
― ― 0.4 V
Isolation Characteristics
(Ta = 25°C)
Characteristic Symbol Test Conditions Min Typ. Max Unit
Capacitance input to output C
S
V = 0 V, f = 1 MHz (Note 5) ― 0.8 ― pF
Isolation resistance R
S
R.H. ≤ 60%, V
S
= 500 V
(Note 5)
1×10
12
10
14
― Ω
Isolation voltage BV
S
AC, 1 minute 3750 ― ―
V
rms
AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc
P1-P3P4-P6P7-P9P10-P11

TLP109(V4-TPL,E

Mfr. #:
Buy TLP109(V4-TPL,E
Manufacturer:
Toshiba
Description:
High Speed Optocouplers Photo-IC -0.5 to 30V 125degC 3750 Vrms
Lifecycle:
New from this manufacturer.
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