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MT18KDF51272PDZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
DRAM Operating Conditions
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision F)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
TBD 945 837 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
TBD 1080 972 mA
Precharge power-down current: Slow exit I
DD2P0
2
TBD 180 144 mA
Precharge power-down current: Fast exit I
DD2P1
2
TBD 540 450 mA
Precharge quiet standby current I
DD2Q
2
TBD 990 810 mA
Precharge standby current I
DD2N
2
TBD 990 810 mA
Precharge stanby ODT current I
DD2NT
1
TBD 765 657 mA
Active power-down current I
DD3P
2
TBD 666 540 mA
Active standby current I
DD3N
2
TBD 1080 900 mA
Burst read operating current I
DD4R
1
TBD 1395 1152 mA
Burst write operating current I
DD4W
1
TBD 1395 1152 mA
Refresh current I
DD5B
1
TBD 1755 1647 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
TBD 108 108 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
TBD 162 162 mA
All banks interleaved read current I
DD7
1
TBD 3330 2682 mA
Reset current I
DD8
2
TBD 216 180 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
783 738 693 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
918 873 828 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
630 540 450 mA
Precharge quiet standby current I
DD2Q
2
810 810 720 mA
Precharge standby current I
DD2N
2
810 810 720 mA
Precharge stanby ODT current I
DD2NT
1
603 558 558 mA
Active power-down current I
DD3P
2
630 630 540 mA
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G) (Continued)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Active standby current I
DD3N
2
810 810 720 mA
Burst read operating current I
DD4R
1
1413 1278 1098 mA
Burst write operating current I
DD4W
1
1458 1323 1143 mA
Refresh current I
DD5B
1
1683 1638 1593 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
144 144 144 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
180 180 180 mA
All banks interleaved read current I
DD7
1
2358 2313 1908 mA
Reset current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
TBD 873 783 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
TBD 1008 963 mA
Precharge power-down current: Slow exit I
DD2P0
2
TBD 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
TBD 540 450 mA
Precharge quiet standby current I
DD2Q
2
TBD 630 540 mA
Precharge standby current I
DD2N
2
TBD 666 576 mA
Precharge stanby ODT current I
DD2NT
1
TBD 513 468 mA
Active power-down current I
DD3P
2
TBD 630 540 mA
Active standby current I
DD3N
2
TBD 720 630 mA
Burst read operating current I
DD4R
1
TBD 1548 1368 mA
Burst write operating current I
DD4W
1
TBD 1593 1413 mA
Refresh current I
DD5B
1
TBD 1908 1818 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
TBD 216 216 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
TBD 270 270 mA
All banks interleaved read current I
DD7
1
TBD 3573 3123 mA
Reset current I
DD8
2
TBD 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT18KDF51272PDZ-1G4D1

Mfr. #:
Buy MT18KDF51272PDZ-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
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