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MT18KDF51272PDZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
Table 15: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision H)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
783 738 693 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
963 918 873 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
666 576 486 mA
Precharge quiet standby current I
DD2Q
2
756 666 576 mA
Precharge standby current I
DD2N
2
774 684 612 mA
Precharge stanby ODT current I
DD2NT
1
576 531 486 mA
Active power-down current I
DD3P
2
846 756 666 mA
Active standby current I
DD3N
2
936 846 756 mA
Burst read operating current I
DD4R
1
1503 1368 1233 mA
Burst write operating current I
DD4W
1
1503 1368 1233 mA
Refresh current I
DD5B
1
1818 1773 1728 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
270 270 270 mA
All banks interleaved read current I
DD7
1
2403 2268 2133 mA
Reset current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 16: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
648 603 558 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
783 738 693 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
594 504 414 mA
Precharge quiet standby current I
DD2Q
2
594 504 414 mA
Precharge standby current I
DD2N
2
630 540 450 mA
Precharge stanby ODT current I
DD2NT
1
468 423 378 mA
Active power-down current I
DD3P
2
846 756 666 mA
Active standby current I
DD3N
2
936 846 756 mA
Burst read operating current I
DD4R
1
1368 1233 1098 mA
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 16: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M) (Continued)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Burst write operating current I
DD4W
1
1233 1098 963 mA
Refresh current I
DD5B
1
1818 1773 1728 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
270 270 270 mA
All banks interleaved read current I
DD7
1
2088 1953 1818 mA
Reset current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 17: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
–
1.425 1.5 1.575 V
DC reference voltage V
REF
–
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
–
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV
–
V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4
–
V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV
–
V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4
–
V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
–
V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0
–
0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350
–
V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out#
– –
TBD mA
Low-level output
current
I
OL
Err_Out# TBD
–
TBD mA
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
2GB, 4GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
Registering Clock Driver Specifications
PDF: 09005aef83aa70c0
kdf18c256_512x72pdz - Rev. C 6/11 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT18KDF51272PDZ-1G4D1

Mfr. #:
Buy MT18KDF51272PDZ-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
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