AD7575
–3–
REV. B
TIMING SPECIFICATIONS
1
Limit at +25C Limit at T
MIN
, T
MAX
Limit at T
MIN
, T
MAX
Parameter (All Versions) (J, K, A, B Versions) (S, T Versions) Units Conditions/Comments
t
1
0 0 0 ns min CS to RD Setup Time
t
2
100 100 120 ns max RD to BUSY Propagation Delay
t
3
2
100 100 120 ns max Data Access Time after RD
t
4
100 100 120 ns min RD Pulse Width
t
5
0 0 0 ns min CS to RD Hold Time
t
6
2
80 80 100 ns max Data Access Time after BUSY
t
7
3
10 10 10 ns min Data Hold Time
80 80 100 ns max
t
8
0 0 0 ns min BUSY to CS Delay
NOTES
1
Timing specifications are sample tested at +25°C to ensure compliance. All input control signals are specified with tr = tf = 20 ns (10% to 90% of +5 V)
and timed from a voltage level of 1.6 V.
2
t
3
and t
6
are measured with the load circuits of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.
3
t
7
is defined as the time required for the data lines to change 0.5 V when loaded with the circuits of Figure 2.
Specifications subject to change without notice.
(V
DD
= +5 V, V
REF
= +1.23 V, AGND = DGND = 0 V)
Test Circuits
ABSOLUTE MAXIMUM RATINGS*
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
Digital Input Voltage to DGND . . . . . . . –0.3 V, V
DD
+ 0.3 V
Digital Output Voltage to DGND . . . . . . –0.3 V, V
DD
+ 0.3 V
CLK Input Voltage to DGND . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
V
REF
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
AIN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
Operating Temperature Range
Commercial (J, K Versions) . . . . . . . . . . . . . . 0°C to +70°C
Industrial (A, B Versions) . . . . . . . . . . . . . –25°C to +85°C
Extended (S, T Versions) . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
Power Dissipation (Any Package) to +75°C . . . . . . . 450 mW
Derates above +75°C by . . . . . . . . . . . . . . . . . . . . . 6 mW/°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7575 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
b High-Z to V
OL
a. High-Z to V
OH
Figure 1. Load Circuits for Data Access Time Test Figure 2. Load Circuits for Data Hold Time Test
a. V
OH
to High-Z b. V
OL
to High-Z
WARNING!
ESD SENSITIVE DEVICE
DGND
3kV 100pF
DBN
DGND
3kV
100pF
DBN
+5V
DGND
3kV 10pF
DBN
DGND
3kV
10pF
DBN
+5V
AD7575
–4–
REV. B
TERMINOLOGY
LEAST SIGNIFICANT BIT (LSB)
An ADC with 8-bits resolution can resolve 1 part in 2
8
(i.e.,
256) of full scale. For the AD7575 with +2.46 V full-scale one
LSB is 9.61 mV.
TOTAL UNADJUSTED ERROR
This is a comprehensive specification that includes full-scale
error, relative accuracy and offset error.
RELATIVE ACCURACY
Relative Accuracy is the deviation of the ADC’s actual code
transition points from a straight line drawn between the devices
measured first LSB transition point and the measured full-scale
transition point.
SNR
Signal-to-Noise Ratio (SNR) is the ratio of the desired signal to
the noise produced in the sampled and digitized analog signal.
SNR is dependent on the number of quantization levels used in
the digitization process; the more levels, the smaller the quantiza-
tion noise. The theoretical SNR for a sine wave input is given by
SNR = (6.02 N + 1.76) dB
where N is the number of bits in the ADC.
FULL-SCALE ERROR (GAIN ERROR)
The gain of a unipolar ADC is defined as the difference between
the analog input levels required to produce the first and the last
digital output code transitions. Gain error is a measure of the
deviation of the actual span from the ideal span of FS – 2 LSBs.
ANALOG INPUT RANGE
With V
REF
= +1.23 V, the maximum analog input voltage range
is 0 V to +2.46 V. The output data in LSBs is related to the
analog input voltage by the integer value of the following
expression:
Data (LSBs) =
256 AIN
2 V
REF
+ 0.5
SLEW RATE
Slew Rate is the maximum allowable rate of change of input
signal such that the digital sample values are not in error. Slew
Rate limitations may restrict the analog signal bandwidth for
full-scale analog signals below the bandwidth allowed from
sampling theorem considerations.
ORDERING GUIDE
Relative
Temperature Accuracy Package
Model
1
Range (LSB) Options
2
AD7575JR 0°C to +70°C ±1 max R-18
AD7575JN 0°C to +70°C ±1 max N-18
AD7575KN 0°C to +70°C ±1/2 max N-18
AD7575JP 0°C to +70°C ±1 max P-20A
AD7575KP 0°C to +70°C ±1/2 max P-20A
AD7575AQ –25°C to +85°C ±1 max Q-18
AD7575BQ –25°C to +85°C ±1/2 max Q-18
AD7575SQ –55°C to +125°C ±1 max Q-18
AD7575TQ –55°C to +125°C ±1/2 max Q-18
AD7575SE –55°C to +125°C ±1 max E-20A
AD7575TE –55°C to +125°C ±1/2 max E-20A
NOTES
1
To order MIL-STD-883, Class B process parts, add /883B to part number.
Contact local sales office for military data sheet. For U.S. Standard Military
Drawing (SMD), see DESC drawing #5962-87762.
2
E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip
Carrier; Q = Cerdip, R = SOIC.
PIN CONFIGURATIONS
PLCCDIP/SOIC
LCCC
TOP VIEW
(Not to Scale)
18
17
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
9
AD7575
DGND
DB5
CS
RD
TP
BUSY
DB6
DB7 (MSB)
CLK
DB4
DB3
V
DD
V
REF
AIN
AGND
DB2
DB1
DB0 (LSB)
TOP VIEW
(Not to Scale)
20 191
2
3
18
14
15
16
17
4
5
6
7
8
9 10111213
NC = NO CONNECT
BUSY
CLK
DB7 (MSB)
DB6
DB5
AIN
AGND
DB0 (LSB)
DB1
DB2
TP
RD
CS
V
DD
V
REF
DGND
NC
NC
DB4
DB3
AD7575
3 2 1 20 19
9 10 11 12 13
18
17
16
15
14
4
5
6
7
8
TOP VIEW
(Not to Scale)
PIN 1
IDENTIFIER
NC = NO CONNECT
TP
BUSY
CLK
DB7 (MSB)
DB6
AIN
AGND
DB0 (LSB)
DB1
DB2
AD7575
RD
CS
NC
V
DD
V
REF
DB5
DGND
NC
DB4
DB3
AD7575
–5–
REV. B
TIMING AND CONTROL OF THE AD7575
The two logic inputs on the AD7575, CS and RD, control both
the starting of conversion and the reading of data from the part.
A conversion is initiated by bringing both of these control inputs
LOW. Two interface options then exist for reading the output
data from the AD7575. These are the Slow Memory Interface
and ROM Interface, their operation is outlined below. It should
be noted that the TP pin of the AD7575 must be hard-wired
HIGH to ensure correct operation of the part. This pin is used
in testing the device and should not be used as a feedthrough pin
in double-sided printed circuit boards.
SLOW MEMORY INTERFACE
The first interface option is intended for use with microproces-
sors that can be forced into a WAIT STATE for at least 5 µs.
The microprocessor (such as the 8085A) starts a conversion and
is halted until the result of the conversion is read from the con-
verter. Conversion is initiated by executing a memory READ to
the AD7575 address, bringing
CS and RD LOW. BUSY subse-
quently goes LOW (forcing the microprocessor READY input
LOW), placing the processor into a WAIT state. The input
signal, which had been tracked by the analog input, is held on
the third falling clock edge of the input clock after
CS and RD
have gone LOW (see Figure 12). The AD7575 then performs a
conversion on this acquired input signal value. When the con-
version is complete (
BUSY goes HIGH), the processor com-
pletes the memory READ and acquires the newly converted
data. The timing diagram for this interface is shown in Figure 3.
ADDRESS
DECODE
ADDRESS
LATCH
AD7575*
TP
CS
RD
BUSY
DB0–DB7
ADDRESS BUS
DATA BUS
+5V
A8–A15
S0
ALE
AD0–AD7
READY
8085A–2
*LINEAR CIRCUITRY OMITTED FOR CLARITY
SO = 0 FOR READ CYCLES
Figure 4. AD7575 to 8085A-2 Slow Memory Interface
The major advantage of this interface is that it allows the micro-
processor to start conversion, WAIT, and then READ data with
a single READ instruction. The fast conversion time of the
AD7575 ensures that the microprocessor is not placed in a
WAIT state for an excessive amount of time.
Faster versions of many processors, including the 8085A-2, test
the condition of the READY input very soon after the start of
an instruction cycle. Therefore,
BUSY of the AD7575 must go
LOW very early in the cycle for the READY input to be effec-
tive in forcing the processor into a WAIT state. When using the
8085A-2, the processor S0 status signal provides the earliest
possible indication that a READ operation is about to occur.
Hence, S0 (which is LOW for a READ cycle) provides the
READ signal to the AD7575. The connection diagram for the
AD7575 to 8085A-2 Slow Memory interface is shown in
Figure 4.
ROM INTERFACE
The alternative interface option on the AD7575 avoids placing
the microprocessor into a WAIT state. In this interface, a con-
version is started with the first READ instruction, and the sec-
ond READ instruction accesses the data and starts a second
conversion. The timing diagram for this interface is shown in
Figure 5. It is possible to avoid starting another conversion on
the second READ (see below).
Conversion is initiated by executing a memory READ instruc-
tion to the AD7575 address, causing
CS and RD to go LOW.
Data is also obtained from the AD7575 during this instruction.
This is old data and may be disregarded if not required.
BUSY
goes LOW, indicating that conversion is in progress, and re-
turns HIGH when conversion is complete. Once again, the
input signal is held on the third falling edge of the input clock
after
CS and RD have gone LOW.
The
BUSY line may be used to generate an interrupt to the
microprocessor or monitored to indicate that conversion is
complete. The processor then reads the newly-converted data.
Alternatively, the delay between the convert start (first READ
instruction) and the data READ (second READ instruction)
must be at least as great as the AD7575 conversion time. For
the AD7575 to operate correctly in the ROM interface mode,
CS and RD should not go LOW before BUSY returns HIGH.
Normally, the second READ instruction starts another conver-
sion as well as accessing the output data. However, if
CS and
RD are brought LOW within one external clock period of
BUSY going HIGH, a second conversion does not occur.
t
5
t
1
t
2
t
6
t
7
t
CONV
HIGH IMPEDANCE
BUS
NEW
DATA
OLD DATA
HIGH IMPEDANCE
BUS
CS
RD
BUSY
DATA
t
3
Figure 3. Slow Memory Interface Timing Diagram

AD7575JPZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog to Digital Converters - ADC CMOS CONVERTER IC
Lifecycle:
New from this manufacturer.
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