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EL2125CSZ-T7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1
®
FN7045.3
EL2125
Ultra-Low Noise, Low Power, Wideband
Amplifier
The EL2125 is an ultra-low noise, wideband amplifier that
runs on half the supply current of competitive parts. It is
intended for use in systems such as ultrasound imaging
where a very small signal needs to be amplified by a large
amount without adding significant noise. Its low power
dissipation enables it to be packaged in the tiny SOT-23
package, which further helps systems where many input
channels create both space and power dissipation problems.
The EL2125 is stable for gains of 10 and greater and uses
traditional voltage feedback. This allows the use of reactive
elements in the feedback loop, a common requirement for
many filter topologies. It operates from ±2.5V to ±15V
supplies and is available in the 5 Ld SOT-23 and 8 Ld SOIC
packages.
The EL2125 is fabricated using Elantec’s proprietary
complementary bipolar process, and is specified for
operation from -45°C to +85°C.
Features
• Voltage noise of only 0.83nV/√Hz
• Current noise of only 2.4pA/√Hz
• 200µV offset voltage
• 175MHz -3dB BW for A
V
= 10
• Low supply current - 10mA
• SOT-23 package available
• ±2.5V to ±15V operation
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Ultrasound input amplifiers
• Wideband instrumentation
• Communication equipment
• AGC and PLL active filters
• Wideband sensors
Pinouts
EL2125
(5 LD SOT-23)
TOP VIEW
EL2125
(8 LD SOIC)
TOP VIEW
Ordering Information
PART NUMBER
PART
MARKING
TAPE &
REEL PACKAGE
PKG.
DWG. #
EL2125CW-T7 F 7”
(3k pcs)
5 Ld SOT-23 MDP0038
EL2125CW-T7A F 7”
(250 pcs)
5 Ld SOT-23 MDP0038
EL2125CS 2125CS - 8 Ld SOIC MDP0027
EL2125CS-T7 2125CS 7” 8 Ld SOIC MDP0027
EL2125CS-T13 2125CS 13” 8 Ld SOIC MDP0027
EL2125CSZ
(See Note)
2125CSZ - 8 Ld SOIC
(Pb-free)
MDP0027
EL2125CSZ-T7
(See Note)
2125CSZ 7” 8 Ld SOIC
(Pb-free)
MDP0027
EL2125CSZ-T13
(See Note)
2125CSZ 13” 8 Ld SOIC
(Pb-free)
MDP0027
NOTE: Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with
both SnPb and Pb-free soldering operations. Intersil Pb-free products
are MSL classified at Pb-free peak reflow temperatures that meet or
exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
2
3
5
4
-+
OUT
VS-
IN+
VS+
IN-
1
2
3
4
8
7
6
5
OUT
VS-
IN+
VS+IN-
-
+
NC
NC
NC
Data Sheet May 4, 2007
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
2
FN7045.3
May 4, 2007
Absolute Maximum Ratings (T
A
= +25°C) Thermal Information
V
S
+ to V
S
- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33V
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Any Input . . . . . . . . . . . . . . . . . . . . . . . . . . V
S
- - 0.3V to V
S
+ + 0.3V
Ambient Operating Temperature . . . . . . . . . . . . . . . .-45°C to +85°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Maximum Die Junction Temperature. . . . . . . . . . . . . . . . . . . +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Specifications V
S
= ±5V, T
A
= +25°C, R
F
= 180Ω, R
G
= 20Ω, R
L
= 500Ω unless otherwise specified.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
DC PERFORMANCE
V
OS
Input Offset Voltage (SO8) 0.2 2 mV
Input Offset Voltage (SOT23-5) 3mV
T
CVOS
Offset Voltage Temperature Coefficient 1.8 µV/°C
I
B
Input Bias Current -30 -22 µA
I
OS
Input Bias Current Offset 0.4 2 µA
T
CIB
Input Bias Current Temperature
Coefficient
0.09 µA/°C
C
IN
Input Capacitance 2.2 pF
A
VOL
Open Loop Gain 80 87 dB
PSRR Power Supply Rejection Ratio
(Note 1)
80 97 dB
CMRR Common Mode Rejection Ratio at CMIR 80 106 dB
CMIR Common Mode Input Range -4.6 3.8 V
V
OUTH
Output Voltage Swing High No load, R
F
= 1kΩ 3.5 3.65 V
V
OUTL
Output Voltage Swing Low No load, R
F
= 1kΩ -3.87 -3.7 V
V
OUTH2
Output Voltage Swing High R
L
= 100Ω 33.3 V
V
OUTL2
Output Voltage Swing Low R
L
= 100Ω -3.5 -3 V
I
OUT
Output Short Circuit Current (Note 2) 80 100 mA
I
S
Supply Current 10.1 11 mA
AC PERFORMANCE - R
G
= 20Ω, C
L
= 5pF
BW -3dB Bandwidth 175 MHz
BW ±0.1dB ±0.1dB Bandwidth 34 MHz
BW ±1dB ±1dB Bandwidth 150 MHz
Peaking Peaking 0.4 dB
SR Slew Rate V
OUT
= 2V
P-P
, measured at 20% to 80% 150 185 V/µs
OS Overshoot, 4V
P-P
Output Square Wave Positive 0.6 %
Negative 2.7 %
t
S
Settling Time to 0.1% of ±1V Pulse 42 ns
EL2125
3
FN7045.3
May 4, 2007
V
N
Voltage Noise Spectral Density 10kHz 0.83 nV/√Hz
I
N
Current Noise Spectral Density 10kHz 2.4 pA/√Hz
HD2 2nd Harmonic Distortion (Note 3) -74 dBc
HD3 3rd Harmonic Distortion -91 dBc
NOTES:
1. Measured by moving the supplies from ±4V to ±6V
2. Pulse test only
3. Frequency = 1MHz, V
OUT
= 2V
P-P
, into 500Ω and 5pF load
Electrical Specifications V
S
= ±5V, T
A
= +25°C, R
F
= 180Ω, R
G
= 20Ω, R
L
= 500Ω unless otherwise specified. (Continued)
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
Electrical Specifications V
S
= ±15V, T
A
= +25°C, R
F
= 180Ω, R
G
= 20Ω, R
L
= 500Ω unless otherwise specified.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
DC PERFORMANCE
V
OS
Input Offset Voltage (SO8) 0.6 3 mV
Input Offset Voltage (SOT23-5) 3mV
T
CVOS
Offset Voltage Temperature Coefficient 4.9 µV/°C
I
B
Input Bias Current -30 -24 µA
I
OS
Input Bias Current Offset 0.4 2 µA
T
CIB
Input Bias Current Temperature
Coefficient
0.08 µA/°C
C
IN
Input Capacitance 2.2 pF
A
VOL
Open Loop Gain 80 87 dB
PSRR Power Supply Rejection Ratio
(Note 4)
80 97 dB
CMRR Common Mode Rejection Ratio at CMIR 75 105 dB
CMIR Common Mode Input Range -14.6 13.8 V
V
OUTH
Output Voltage Swing High No load, R
F
= 1kΩ 13.35 13.5 V
V
OUTL
Output Voltage Swing Low No load, R
F
= 1kΩ -13.6 -13 V
V
OUTH2
Output Voltage Swing High R
L
= 100Ω 11 11.6 V
V
OUTL2
Output Voltage Swing Low R
L
= 100Ω -10.4 -9.8 V
I
OUT
Output Short Circuit Current (Note 5) 120 250 mA
I
S
Supply Current 10.8 12 mA
AC PERFORMANCE - R
G
= 20Ω, C
L
= 5pF
BW -3dB Bandwidth 220 MHz
BW ±0.1dB ±0.1dB Bandwidth 23 MHz
BW ±1dB ±1dB Bandwidth 63 MHz
Peaking Peaking 2.5 dB
SR Slew Rate V
OUT
= 2V
P-P
, measured at 20% to 80% 180 225 V/µs
OS Overshoot, 4V
P-P
Output Square Wave 0.6 %
t
S
Settling Time to 0.1% of ±1V Pulse 38 ns
EL2125
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

EL2125CSZ-T7

Mfr. #:
Buy EL2125CSZ-T7
Manufacturer:
Renesas / Intersil
Description:
High Speed Operational Amplifiers EL2125CSZ LW NOISE CVR A=11
Lifecycle:
New from this manufacturer.
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