SGP04N60XKSA1 Datasheet SGD04N60BUMA1, SGP04N60XKSA1 | P1-P3

SGP04N60

SGD04N60

1 Rev. 2.2 Sep 07

Fast IGBT in NPT-technology

• 75% lower E

off

compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

2

for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V

CE

I

C

V

CE(sat)150°C

T

j

Marking Package

SGP04N60 600V 4A 2.3V

150°C

G04N60 PG-TO-220-3-1

SGD04N60 600V 4A 2.3V

150°C

G04N60 PG-TO-252-3-11

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

V

CE

600 V

DC collector current

T

C

= 25°C

T

C

= 100°C

I

C

9.4

4.9

Pulsed collector current, t

p

limited by T

jmax

I

Cpuls

19

Turn off safe operating area

V

CE

≤ 600V, T

j

≤ 150°C

-

19

A

Gate-emitter voltage

V

GE

±20

V

Avalanche energy, single pulse

I

C

= 4 A, V

CC

= 50 V, R

GE

= 25 Ω,

start at T

j

= 25°C

E

AS

25 mJ

Short circuit withstand time

1)

V

GE

= 15V, V

CC

≤ 600V, T

j

≤ 150°C

t

SC

10

µs

Power dissipation

T

C

= 25°C

P

tot

50 W

Operating junction and storage temperature

T

j

, T

stg

-55...+150

Soldering temperature,

PG-TO-252: (reflow soldering, MSL3)

Others: wavesoldering, 1.6mm (0.063 in.) from case for 10s

T

s

260

°C

2

J-STD-020 and JESD-022

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

PG-TO-220-3-1

(TO-220AB)

PG-TO-252-3-1 (D-PAK)

(TO-252AA)

SGP04N60

SGD04N60

2 Rev. 2.2 Sep 07

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R

thJC

2.5

Thermal resistance,

junction – ambient

R

thJA

PG-TO-220-3-1 62

SMD version, device on PCB

1)

R

thJA

PG-TO-252-3-1 50

K/W

Electrical Characteristic, at T

j

= 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions

min. Typ. max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V, I

C

=500µA

600 - -

Collector-emitter saturation voltage

V

CE(sat)

V

GE

= 15V, I

C

=4A

T

j

=25°C

T

j

=150°C

1.7

-

2.0

2.3

2.4

2.8

Gate-emitter threshold voltage

V

GE(th)

I

C

=200µA,V

CE

=V

GE

3 4 5

V

Zero gate voltage collector current

I

CES

V

CE

=600V,V

GE

=0V

T

j

=25°C

T

j

=150°C

-

20

500

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

- - 100 nA

Transconductance

g

fs

V

CE

=20V, I

C

=4A

3.1 - S

Dynamic Characteristic

Input capacitance

C

iss

- 264 317

Output capacitance

C

oss

- 29 35

Reverse transfer capacitance

C

rss

V

CE

=25V,

V

GE

=0V,

f=1MHz

- 17 20

pF

Gate charge

Q

Gate

V

CC

=480V, I

C

=4A

V

GE

=15V

- 24 31 nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L

E

-

7

-

nH

Short circuit collector current

2)

I

C(SC)

V

GE

=15V,t

SC

≤10µs

V

CC

≤ 600V,

T

j

≤ 150°C

- 40 - A

1)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

SGP04N60

SGD04N60

3 Rev. 2.2 Sep 07

Switching Characteristic, Inductive Load, at T

j

=25 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time

t

d(on)

- 22 26

Rise time

t

r

- 15 18

Turn-off delay time

t

d(off)

- 237 284

Fall time

t

f

- 70 84

ns

Turn-on energy

E

on

- 0.070 0.081

Turn-off energy

E

off

- 0.061 0.079

Total switching energy

E

ts

T

j

=25°C,

V

CC

=400V,I

C

=4A,

V

GE

=0/15V,

R

G

=67Ω,

L

σ

1)

=180nH,

C

σ

1)

=180pF

Energy losses include

“tail” and diode

reverse recovery.

- 0.131 0.160

mJ

Switching Characteristic, Inductive Load, at T

j

=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time

t

d(on)

- 22 26

Rise time

t

r

- 16 19

Turn-off delay time

t

d(off)

- 264 317

Fall time

t

f

- 104 125

ns

Turn-on energy

E

on

- 0.115 0.132

Turn-off energy

E

off

- 0.111 0.144

Total switching energy

E

ts

T

j

=150°C

V

CC

=400V, I

C

=4A,

V

GE

=0/15V,

R

G

=67Ω,

L

σ

1)

=180nH,

C

σ

1)

=180pF

Energy losses include

“tail” and diode

reverse recovery.

- 0.226 0.277

mJ

1)

Leakage inductance L

σ

and Stray capacity C

σ

due to dynamic test circuit in Figure E.

SGP04N60XKSA1

SGP04N60XKSA1

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