SGP04N60
SGD04N60
6 Rev. 2.2 Sep 07
t, SWITCHING TIMES
0A 2A 4A 6A 8A 10A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
0Ω 50Ω 100Ω 150Ω 200Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 67Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
j
= 150°C, V
CE
= 400V,
V
GE
= 0/+15V, I
C
= 4A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th)
, GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
, JUNCTION TEMPERATURE
T
j
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 400V, V
GE
= 0/+15V,
I
C
= 4A, R
G
= 67Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
= 0.2mA)
