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MIXA10WB1200TED

P1-P3P4-P6P7-P7
© 2009 IXYS All rights reserved
1 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
I
DAVM
= 105 A I
C25
= 17 A I
C25
= 17 A
I
FSM
= 320 A V
CE(sat)
= 1.8 V V
CE(sat)
= 1.8 V
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
Part name (Marking on product)
MIXA10WB1200TED
E 72873
21 22
1
D12
2
D13
D7
T7
D1
D3
D5
D2
D4
D6
T1 T3 T5
T2
T4
T6
D15D11
D14 D16
3
23 24
14
7
16
15
11
10
18
17
12
6
20
19
13
5
4
NTC
8
9
Preliminary data
© 2009 IXYS All rights reserved
2 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
17
12
A
A
P
tot
total power dissipation
T
C
= 25°C 60 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 9 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.8
2.1
2.1 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.3 mA; V
GE
= V
CE
T
VJ
= 25°C 5.5 6.0 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
0.01
0.1
0.7 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 500 nA
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 27 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100 W
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W;
T
VJ
= 125°C
V
CEK
= 1200 V 30 A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE
= 900 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 100 W; non-repetitive 40
10 µs
A
R
thJC
thermal resistance junction to case
(per IGBT) 2.0 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 25°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
19
13
A
A
V
F
forward voltage
I
F
= 10 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
1.95
1.85
2.2 V
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt = - A/µs T
VJ
= 125°C
I
F
= 10 A; V
GE
= 0 V
tbd
tbd
tbd
tbd
µC
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode) 2.4 K/W
T
C
= 25°C unless otherwise stated
© 2009 IXYS All rights reserved
3 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
17
12
A
A
P
tot
total power dissipation
T
C
= 25°C 60 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 9 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.8
2.1
2.1 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.3 mA; V
GE
= V
CE
T
VJ
= 25°C 5.5 6.0 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.1
0.1 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 500 nA
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 27 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100 W
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W;
T
VJ
= 125°C
V
CEK
= 1200 V 30 A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE
= 900 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 100 W; non-repetitive 40
10 µs
A
R
thJC
thermal resistance junction to case
(per IGBT) 2.0 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 25°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
12
8
A
A
V
F
forward voltage
I
F
= 5 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
1.95
1.85
2.2 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.5
0.5 mA
mA
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt = tbd A/µs T
VJ
= 125°C
I
F
= 10 A; V
GE
= 0 V
tbd
tbd
tbd
tbd
µC
A
ns
µJ
R
thJC
thermal resistance junction to case
(per diode) 3.4 K/W
T
C
= 25°C unless otherwise stated
P1-P3P4-P6P7-P7

MIXA10WB1200TED

Mfr. #:
Buy MIXA10WB1200TED
Manufacturer:
Littelfuse
Description:
IGBT Modules Converter-Brake Inverter Module
Lifecycle:
New from this manufacturer.
Delivery:
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