© 2009 IXYS All rights reserved
7 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
0.001 0.01 0.1 1 10
0.1
1
t
p
[s]
Z
thJC
[K/W]
Diode
IGBT
200 250 300 350 400 450 500
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
egrahcyrevoceresreverlacipyT8.giFscitsiretcarahcdrawrof.pyT7.giF
Q
rr
versus. di
F
/dt (125°C)
200 250 300 350 400 450 500
0
4
8
12
16
20
24
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
Fig. 9 Typical peak reverse current
I
RR
versus di
F
/dt (125°C)
200 250 300 350 400 450 500
0
100
200
300
400
500
t
rr
[ns]
di
F
/dt [A/µs]
5 A
10 A
20 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
vs. di/dt (125°C)
Fig. 11 Typ. recovery energy E
rec
vs. di
F
/dt (125°C)
200 250 300 350 400 450 500
0.1
0.2
0.3
0.4
0.5
0.6
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
5 A
10 A
20 A
IGBT FRD
R
i
t
i
R
i
t
i
1 0.446 0.0015 0.8 0.002
2 0.415 0.03 0.58 0.03
3 0.672 0.03 0.98 0.03
4 0.467 0.08 0.04 0.08
Fig. 8 Transient thermal impedance
