IXYH30N65C3H1 Datasheet IXYH30N65C3H1, IXYT30N65C3H1HV | P1-P3

IXYT30N65C3H1HV

IXYH30N65C3H1

V

CES

= 650V

I

C110

= 30A

V

CE(sat)







2.7V

t

fi(typ)

= 24ns

DS100545A(7/14)

Extreme Light Punch Through

IGBT for 20-60kHz Switching

Features



Optimized for 20-60kHz Switching



Square RBSOA



High Voltage



Avalanche Rated



Short Circuit Capability



Anti-Parallel Sonic Diode

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 50 A

T

J

= 150C 4 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 30A, V

GE

= 15V, Note 1 2.35 2.70 V

T

J

= 150C 2.58 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 60 A

I

C110

T

C

= 110°C 30 A

I

F110

T

C

= 110°C 29 A

I

CM

T

C

= 25°C, 1ms 118 A

I

A

T

C

= 25°C 10 A

E

AS

T

C

= 25°C 300 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 10 I

CM

= 60 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 270 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in

Weight TO-220 4 g

TO-247 6 g

XPT

TM

650V IGBT

GenX3

TM

w/ Sonic

Diode

TO-268HV

G

C (Tab)

E

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 AD

G

C

E

Tab

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYT30N65C3H1HV

IXYH30N65C3H1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 30A, V

CE

= 10V, Note 1 11 19 S

C

ie

s

1225 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 173 pF

C

res

28 pF

Q

g(on)

44 nC

Q

ge

I

C

= 30A, V

GE

= 15V, V

CE

= 0.5 • V

CES

7 nC

Q

gc

24 nC

t

d(on)

21 ns

t

ri

42 ns

E

on

1.00 mJ

t

d(off)

75 ns

t

fi

24 ns

E

of

f

0.27 mJ

t

d(on)

19 ns

t

ri

40 ns

E

on

1.50 mJ

t

d(off)

90 ns

t

fi

30 ns

E

off

0.41 mJ

R

thJC

0.55 °C/W

R

thCS

TO-247 0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 10

Note 2

Inductive load, T

J

= 150°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 10

Note 2

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

TO-268HV Outline

1 - Gate

2 - Emitter

3 - Collector

TO-247 (IXYH) Outline

1 - Gate

2,4 - Collector

3 - Emitter

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Reverse Sonic Diode (FRD)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 30A, V

GE

= 0V, Note 1 2.5 V

T

J

= 150°C 2.15 V

I

RM

T

J

= 150°C 25 A

t

rr

T

J

= 150°C 120 ns

R

thJC

0.80 °C/W

I

F

= 30A, V

GE

= 0V,

-di

F

/dt = 500A/μs, V

R

= 400V

IXYT30N65C3H1HV

IXYH30N65C3H1

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

10V

7V

9V

11V

8V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

8V

9V

11V

13V

12V

14V

10V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

10

20

30

40

50

60

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

10V

9V

6V

11V

8V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 30A

I

C

= 15A

I

C

=60A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60A

T

J

= 25ºC

30A

15A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

567891011

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYH30N65C3H1

IXYH30N65C3H1

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