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IXYH30N65C3H1

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
0 5 10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
150ºC
25ºC
V
CE
= 10V
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 30A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2014 IXYS CORPORATION, All Rights Reserved
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10 20 30 40 50 60 70 80
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
30
40
50
60
70
80
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f i
- Nanoseconds
50
100
150
200
250
300
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f i
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
60
65
70
75
80
85
90
95
100
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT30N65C3H1HV
IXYH30N65C3H1
IXYS REF: IXY_30N65C3(4D)5-10-13
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r i
- Nanosecond
s
10
14
18
22
26
30
34
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r i
- Nanosecond
s
0
20
40
60
80
100
120
140
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
Fig. 21. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1,000
f
max
- KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 400V
V
GE
= 15V
R
G
= 10
D = 0.5
Square Wave
Triangular Wave
P1-P3P4-P6

IXYH30N65C3H1

Mfr. #:
Buy IXYH30N65C3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/60A XPT C3 Copacked TO-247
Lifecycle:
New from this manufacturer.
Delivery:
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