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SIHH28N60E-T1-GE3

P1-P3P4-P6P7-P7
SiHH28N60E
www.vishay.com
Vishay Siliconix
S17-0250-Rev. B, 20-Feb-17
1
Document Number: 91932
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Completely lead (Pb)-free device
• Low figure-of-merit (FOM) R
on
x Q
g
• Low input capacitance (C
iss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 5 A
c. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
typ. () at 25 °C V
GS
= 10 V 0.085
Q
g
max. (nC) 129
Q
gs
(nC) 20
Q
gd
(nC) 44
Configuration Single
Pin 3
Pin 4
Pin 1
Pin 2
N-Channel MOSFET
PowerPAK
®
8 x 8
1
2
3
3
4
ORDERING INFORMATION
Package PowerPAK 8 x 8
Lead (Pb)-free and halogen-free SiHH28N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
600
V
Gate-source voltage V
GS
± 30
Continuous drain current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
29
AT
C
= 100 °C 19
Pulsed drain current
a
I
DM
76
Linear derating factor 1.6 W/°C
Single pulse avalanche energy
b
E
AS
353 mJ
Maximum power dissipation P
D
202 W
Operating junction and storage temperature range T
J
, T
stg
-55 to +150 °C
Drain-source voltage slope T
J
= 125 °C
dV/dt
70
V/ns
Reverse diode dV/dt
c
13
SiHH28N60E
www.vishay.com
Vishay Siliconix
S17-0250-Rev. B, 20-Feb-17
2
Document Number: 91932
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient R
thJA
38 50
°C/W
Maximum junction-to-case (Drain)
R
thJC
0.48 0.62
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
temperature coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 10 mA - 0.58 - V/°C
Gate-source threshold voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.0 - 5.0 V
Gate-source leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
V
GS
= ± 30 V - - ± 1 μA
Zero gate voltage drain current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-source on-state resistance R
DS(on)
V
GS
= 10 V I
D
= 14 A - 0.085 0.098
Forward transconductance g
fs
V
DS
= 30 V, I
D
= 14 A - 7.6 - S
Dynamic
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
-2614-
pF
Output capacitance C
oss
-125-
Reverse transfer capacitance C
rss
-5-
Effective output capacitance, energy
related
a
C
o(er)
V
DS
= 0 V to 480 V, V
GS
= 0 V
-86-
Effective output capacitance, time
related
b
C
o(tr)
-444-
Total gate charge Q
g
V
GS
= 10 V I
D
= 10 A, V
DS
= 480 V
- 86 129
nC Gate-source charge Q
gs
-20-
Gate-drain charge Q
gd
-44-
Turn-on delay time t
d(on)
V
DD
= 480 V, I
D
= 14 A,
V
GS
= 10 V, R
g
= 9.1
-2958
ns
Rise time t
r
- 75 113
Turn-off delay time t
d(off)
- 84 126
Fall time t
f
-5481
Gate input resistance R
g
f = 1 MHz 0.2 0.5 1.0
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--29
A
Pulsed diode forward current I
SM
--76
Diode forward voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V - 0.9 1.2 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 14 A,
dI/dt = 100 A/μs, V
R
= 25 V
- 386 772 ns
Reverse recovery charge Q
rr
- 6 12 μC
Reverse recovery current I
RRM
-25- A
S
D
G
SiHH28N60E
www.vishay.com
Vishay Siliconix
S17-0250-Rev. B, 20-Feb-17
3
Document Number: 91932
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - C
OSS
and E
OSS
vs. V
DS
0
20
40
60
80
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
T
J
= 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
10
20
30
40
50
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
T
J
= 150 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
20
40
60
80
0 5 10 15 20
I
D
, Drain-to-Source Current (A)
V
GS
, Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
= 27 V
0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
I
D
= 14 A
V
GS
= 10 V
1
10
100
1000
10 000
100 000
0 100 200 300 400 500 600
C, Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
4
6
8
10
12
14
16
18
50
500
5000
0 100 200 300 400 500 600
E
oss
, Output Capacitance stored Energy (μJ)
C
oss
, Output Capacitance (pF)
V
DS,
Drain-to-Source Voltage (V)
C
oss
E
oss
P1-P3P4-P6P7-P7

SIHH28N60E-T1-GE3

Mfr. #:
Buy SIHH28N60E-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:
New from this manufacturer.
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