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SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3
Mfr. #:
SIHH28N60E-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:
New from this manufacturer.
Datasheet:
SIHH28N60E-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH28N60E-T1-GE3 DatasheetSIHH28N60E-T1-GE3 Datasheet (P4-P6)SIHH28N60E-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHH28N60E-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-8x8-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
29 A
Rds On - Drain-Source Resistance:
85 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
86 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
202 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
54 ns
Product Type:
MOSFET
Rise Time:
76 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
84 ns
Typical Turn-On Delay Time:
29 ns
Unit Weight:
0.068784 oz
Tags
SIHH2, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 29A 5-Pin PowerPAK T/R
***nell
MOSFET, N-CH, 600V, 29A, POWERPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
*** Europe
N-CH SINGLE 650V PPAK 8X8
***
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHH28N60E-T1-GE3
DISTI # V36:1790_17597451		Vishay IntertechnologiesSIHH28N60E-T1-GE30
  • 3000000:$3.1280
  • 1500000:$3.1330
  • 300000:$3.8290
  • 30000:$5.2670
  • 3000:$5.5200
SIHH28N60E-T1-GE3
DISTI # SIHH28N60E-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A POWERPAK8
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 2500:$3.2036
  • 1000:$3.3722
  • 500:$3.9984
  • 100:$4.6970
  • 10:$5.7330
  • 1:$6.3800
SIHH28N60E-T1-GE3
DISTI # SIHH28N60E-T1-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 29A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH28N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$2.8900
  • 18000:$2.9900
  • 12000:$3.0900
  • 6000:$3.1900
  • 3000:$3.2900
SIHH28N60E-T1-GE3
DISTI # 20AC3837		Vishay IntertechnologiesN-CHANNEL 600V0
  • 20000:$2.8300
  • 12000:$2.8700
  • 8000:$2.9900
  • 4000:$3.2200
  • 2000:$3.4500
  • 1:$3.6100
SIHH28N60E-T1-GE3
DISTI # 78-SIHH28N60E-T1-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant		771
  • 1:$6.4300
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$3.8100
  • 1000:$3.2200
  • 3000:$3.0600
SIHH28N60E-T1-GE3
DISTI # 2708302		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, POWERPAK
RoHS: Compliant		2961
  • 2500:$4.8400
  • 1000:$5.0900
  • 500:$6.0300
  • 100:$7.0800
  • 10:$8.6400
  • 1:$9.6100
SIHH28N60E-T1-GE3
DISTI # 2708302		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, POWERPAK2966
  • 500:£2.6200
  • 250:£2.9200
  • 100:£3.0200
  • 10:£3.6500
  • 1:£4.8700
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OMO.#: OMO-C0402C104M4RACAUTO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 16V 0.1uF X7R 0402 20% AEC-Q200
IPL60R065P7AUMA1

Mfr.#: IPL60R065P7AUMA1

OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

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Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO-KEMET

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OMO.#: OMO-C0805C106J8RACAUTO-KEMET

 CAPACITOR MLCC 0805 10UF 10V X7R +/-5%, RL of 2500
Availability
Stock:
771
On Order:
2754
Enter Quantity:
Current price of SIHH28N60E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.43
$6.43
10
$5.33
$53.30
100
$4.39
$439.00
250
$4.25
$1 062.50
500
$3.81
$1 905.00
1000
$3.22
$3 220.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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