PartNumber | SIHH100N60E-T1-GE3 | SIHH11N60E-T1-GE3 | SIHH068N60E-T1-GE3 |
Description | MOSFET 650V Vds; 30V Vgs PowerPAK 8x8 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-4 | PowerPAK-8x8-4 | PowerPAK-8x8-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 28 A | 11 A | 34 A |
Rds On Drain Source Resistance | 100 mOhms | 295 mOhms | 68 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 53 nC | 31 nC | 80 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 174 W | 114 W | 202 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Series | E | E | E |
Transistor Type | 1 N-Channel | - | 1 N-Channel E-Series Power MOSFET |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 12 S | - | 9.3 S |
Fall Time | 41 ns | 21 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 54 ns | 21 ns | 148 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 41 ns | 39 ns | 60 ns |
Typical Turn On Delay Time | 26 ns | 16 ns | 56 ns |
Height | - | 1 mm | - |
Length | - | 8 mm | - |
Width | - | 8 mm | - |