PartNumber | SIHH186N60EF-T1GE3 | SIHH21N60E-T1-GE3 | SIHH20N50E-T1-GE3 |
Description | MOSFET EF Series Power MOSFET With Fast Body Diode | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 500V Vds 30V Vgs PowerPAK 8 x 8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK 8 x 8 | PowerPAK-8x8-4 | PowerPAK-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 500 V |
Id Continuous Drain Current | 16 A | 20 A | 22 A |
Rds On Drain Source Resistance | 168 mOhms | 153 mOhms | 128 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 4 V | 2 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 21 nC | 55 nC | 84 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | Reel |
Series | EF | E | SIH |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 16 ns | 45 ns | 41 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 23 ns | 32 ns | 41 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 68 ns | 67 ns |
Typical Turn On Delay Time | 14 ns | 20 ns | 22 ns |
Pd Power Dissipation | - | 104 W | 174 W |
Configuration | - | Single | Single |
Height | - | 1 mm | - |
Length | - | 8 mm | - |
Width | - | 8 mm | - |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 8.4 S |