SIHH21N65EF-T1-GE3

Mfr. #:: SIHH21N65EF-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:: New from this manufacturer.
Datasheet:: SIHH21N65EF-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHH21N65EF-T1-GE3 Datasheet SIHH21N65EF-T1-GE3 Datasheet (P4-P6)SIHH21N65EF-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SIHH21N65EF-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-8x8-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 20.3 A

Rds On - Drain-Source Resistance:: 148 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 66 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 156 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: EF

Brand:: Vishay / Siliconix

Fall Time:: 44 ns

Product Type:: MOSFET

Rise Time:: 46 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 69 ns

Typical Turn-On Delay Time:: 26 ns

Tags: SIHH21N65, SIHH21, SIHH2, SIHH, SIH

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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SIHH21N65EF-T1-GE3 Description

***ical: Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK EP T/R

***ronik: N-CH 700V 19,8A 157mOhm PPAK8x8

***ark: Mosfet, N-Ch, 650V, 19.8A, Powerpak-5; Transistor Polarity:n Channel; Continuous Drain Current Id:19.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.157Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ure Electronics: N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8

***el Electronic: VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V

***nell: MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***icroelectronics: N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK

***nell: MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***r Electronics: Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes

***icroelectronics: N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

*** Source Electronics: MOSFET N-CH 600V 21A D2PAK / Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 600 V 0.16 Ohm Surface Mount FDmesh II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 650V, 17A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

*** Source Electronics: MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

***roFlash: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ark: Channel Type:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ical: Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK

*** Electronics: VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3

***ure Electronics: MOSFET 500V Vds 30V Vgs D2PAK (TO-263)

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

SIHH21N65EF-T1-GE3 More Information

EF Series High Voltage Power MOSFETs: Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

Market price

Part #	Mfg.	Description	Stock	Price
SIHH21N65EF-T1-GE3 DISTI # SIHH21N65EF-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 650V 19.8A POWERPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3661In Stock	1000:$3.5727 500:$4.1020 100:$4.7106 10:$5.6900 1:$6.3000
SIHH21N65EF-T1-GE3 DISTI # SIHH21N65EF-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 650V 19.8A POWERPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3661In Stock	1000:$3.5727 500:$4.1020 100:$4.7106 10:$5.6900 1:$6.3000
SIHH21N65EF-T1-GE3 DISTI # SIHH21N65EF-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 650V 19.8A POWERPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$3.4172
SIHH21N65EF-T1-GE3 DISTI # SIHH21N65EF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R (Alt: SIHH21N65EF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 50	30000:€2.9900 18000:€3.1900 12000:€3.5900 6000:€4.3900 3000:€5.5900
SIHH21N65EF-T1-GE3 DISTI # SIHH21N65EF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH21N65EF-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$3.0900 18000:$3.1900 12000:$3.2900 6000:$3.3900 3000:$3.4900
SIHH21N65EF-T1-GE3 DISTI # 01AC4964	Vishay Intertechnologies	MOSFET, N-CH, 650V, 19.8A, POWERPAK-5,Transistor Polarity:N Channel,Continuous Drain Current Id:19.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.157ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	21	500:$3.3900 250:$3.6600 100:$3.8500 50:$4.3400 25:$4.6900 10:$5.4300 1:$5.7000
SIHH21N65EF-T1-GE3 DISTI # 20AC3833	Vishay Intertechnologies	N-CHANNEL 650V	0	20000:$3.0100 12000:$3.0600 8000:$3.1900 4000:$3.4300 2000:$3.6700 1:$3.8500
SIHH21N65EF-T1-GE3 DISTI # 78-SIHH21N65EF-T1GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant	0	1:$6.8600 10:$5.6800 100:$4.6800 250:$4.5300 500:$4.0700 1000:$3.4300 3000:$3.2600
SIHH21N65EF-T1-GE3 DISTI # 2576523	Vishay Intertechnologies	MOSFET, N-CH, 650V, 19.8A, POWERPAK-5 RoHS: Compliant	21	1000:$5.3900 500:$6.1900 100:$7.1000 10:$8.5800 1:$9.4900
SIHH21N65EF-T1-GE3 DISTI # 2576523	Vishay Intertechnologies	MOSFET, N-CH, 650V, 19.8A, POWERPAK-5	21	1:£2.2700
SIHH21N65EF-T1-GE3 DISTI # TMOS1216	Vishay Intertechnologies	N-CH 700V 19,8A 157mOhm PPAK8x8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$3.6900
SIHH21N65EF-T1-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SIHH21N65EF-T1-GE3 OMO.#: OMO-SIHH21N65EF-T1-GE3	MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
	Mfr.#: SIHH21N65E-T1-GE3 OMO.#: OMO-SIHH21N65E-T1-GE3	MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
	Mfr.#: SIHH21N65EF OMO.#: OMO-SIHH21N65EF-1190	New and Original
	Mfr.#: SIHH21N65E-T1-GE3 OMO.#: OMO-SIHH21N65E-T1-GE3-VISHAY	Trans MOSFET N-CH 650V 20.3A 4-Pin PowerPAK EP T/R
	Mfr.#: SIHH21N65EF-T1-GE3 OMO.#: OMO-SIHH21N65EF-T1-GE3-VISHAY	MOSFET N-CH 650V 19.8A POWERPAK

SIHH21N65EF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes