SIHH21

SIHH21N60E-T1-GE3 vs SIHH21N60EF-T1-GE3 vs SIHH21N65E-T1-GE3

 
PartNumberSIHH21N60E-T1-GE3SIHH21N60EF-T1-GE3SIHH21N65E-T1-GE3
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-8x8-4PowerPAK-8x8-4PowerPAK-8x8-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V650 V
Id Continuous Drain Current20 A20 A20.3 A
Rds On Drain Source Resistance153 mOhms153 mOhms148 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge55 nC55 nC66 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation104 W104 W156 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height1 mm1 mm1 mm
Length8 mm8 mm8 mm
SeriesEEFEF
Width8 mm8 mm8 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time45 ns45 ns44 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time32 ns32 ns46 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time68 ns68 ns69 ns
Typical Turn On Delay Time20 ns20 ns26 ns
Unit Weight--0.001764 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHH21N60E-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH21N65EF-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH21N60EF-T1-GE3 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
SIHH21N65E-T1-GE3 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
SIHH21N60E New and Original
SIHH21N65EF New and Original
Vishay
Vishay
SIHH21N60E-T1-GE3 MOSFET N-CH 600V 20A POWERPAK8X8
SIHH21N60EF-T1-GE3 MOSFET N-CHAN 600V 19A POWERPAK
SIHH21N65E-T1-GE3 Trans MOSFET N-CH 650V 20.3A 4-Pin PowerPAK EP T/R
SIHH21N65EF-T1-GE3 MOSFET N-CH 650V 19.8A POWERPAK
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