MTY100N10E Datasheet MTY100N10E | P1-P3

August, 2006 − Rev. 4

1 Publication Order Number:

MTY100N10E/D

MTY100N10E

Preferred Device

Power MOSFET

100 Amps, 100 Volts

N−Channel TO−264

This advanced Power MOSFET is designed to withstand high

energy in the avalanche and commutation modes. This new energy

efficient design also offers a drain−to−source diode with fast recovery

time. Designed for high voltage, high speed switching applications in

power supplies, converters, PWM motor controls, and other inductive

loads. The avalanche energy capability is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

MAXIMUM RATINGS (T

C

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−Source Voltage V

DSS

100 Vdc

Drain−Gate Voltage (R

GS

= 1 MΩ) V

DGR

100 Vdc

Gate−Source Voltage

− Continuous

− Non−Repetitive (t

p

≤ 10 ms)

V

GS

V

GSM

± 20

± 40

Vdc

Vpk

Drain Current − Continuous @ T

C

= 25°C

Drain Current − Single Pulse (t

p

≤ 10 μs)

I

D

I

DM

100

300

Adc

Apk

Total Power Dissipation

Derate above 25°C

P

D

300

2.38

Watts

W/°C

Operating and Storage Temperature Range T

J

, T

stg

−55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 80 Vdc, V

GS

= 10 Vdc, Peak

I

L

= 100 Apk, L = 0.1 mH, R

G

= 25 Ω )

E

AS

250 mJ

Thermal Resistance − Junction to Case

Thermal Resistance − Junction to Ambient

R

θ

JC

R

θ

JA

0.42

40

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

T

L

260 °C

100 AMPERES

100 VOLTS

R

DS(on)

= 11 mΩ

Device Package Shipping

ORDERING INFORMATION

MTY100N10E TO−264 25 Units/Rail

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

LL = Location Code

Y = Year

WW = Work Week

MARKING DIAGRAM

& PIN ASSIGNMENT

D

G

TO−264

CASE 340G

Style 1

MTY100N10E

N−Channel

S

LLYWW

1

2

3

1

Gate

3

Source

2

Drain

MTY100N10E

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(V

GS

= 0, I

D

= 250 μA)

Temperature Coefficient (Positive)

V

(BR)DSS

100

−

115

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= 100 Vdc, V

GS

= 0 Vdc)

(V

DS

= 100 Vdc, V

GS

= 0 Vdc, T

J

= 125°C)

I

DSS

−

10

200

μAdc

Gate−Body Leakage Current (V

GS

= ± 20 Vdc, V

DS

= 0) I

GSS

− − 100 nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 250 μAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

7

4

−

Vdc

mV/°C

Static Drain−Source On−Resistance (V

GS

= 10 Vdc, I

D

= 50 Adc) R

DS(on)

− − 0.011 Ohm

Drain−Source On−Voltage (V

GS

= 10 Vdc)

(I

D

= 100 Adc)

(I

D

= 50 Adc, T

J

= 125°C)

V

DS(on)

−

1.0

−

1.2

1.0

Vdc

Forward Transconductance (V

DS

= 6 Vdc, I

D

= 50 Adc) g

FS

30 49 − mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 Vdc,

f = 1 MHz)

C

iss

− 7600 10640 pF

Output Capacitance C

oss

− 3300 4620

Reverse Transfer Capacitance C

rss

− 1200 2400

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(V

DD

= 50 Vdc, I

D

= 100 Adc,

V

GS

= 10 Vdc,

R

G

= 9.1 Ω)

t

d(on)

− 48 96 ns

Rise Time t

r

− 490 980

Turn−Off Delay Time t

d(off)

− 186 372

Fall Time t

f

− 384 768

Gate Charge

(See Figure 8)

(V

DS

= 80 Vdc, I

D

= 100 Adc,

V

GS

= 10 Vdc)

Q

T

− 270 378 nC

Q

1

− 50 −

Q

2

− 150 −

Q

3

− 118 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(I

S

= 100 Adc, V

GS

= 0 Vdc)

(I

S

= 100 Adc, V

GS

= 0 Vdc, T

J

= 125°C)

V

SD

−

1

0.9

1.2

−

Vdc

Reverse Recovery Time

(See Figure 14)

(I

S

= 100 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/μs)

t

rr

− 145 −

ns

t

a

− 90 −

t

b

− 55 −

Reverse Recovery Stored

Charge

Q

RR

− 2.34 − μC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

L

D

− 4.5 − nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

− 13 − nH

1. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

MTY100N10E

http://onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

1000000

100000

1000

100

1

0 40 80 100 120

1.8

1.6

1.4

1.2

0.8

0.6

−50 −25 0 25 50 75 100 125 150

0.011

0.0105

0.01

0.0095

0.009

0.008

I

D

, DRAIN CURRENT (AMPS)

15 V

0.018

0.016

0.014

0.012

0.006

0 100 200

25°C

15050

200

0

02 4 6 810

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

I

D

, DRAIN CURRENT (AMPS)

V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

I

D

, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

T

J

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

0

V

GS

= 10 V

V

DS

≥ 10 V

V

GS

= 10 V

T

J

= 100°C

−55 °C

V

GS

= 10 V

V

GS

= 0 V

160

120

80

60

23456 10

0 100 20015050

T

J

= 125°C

0.01

0.008

20

100

40

20

789

0.0085

1

10

60

T

J

= 25°C

80

40

9 V

8 V

7 V

6 V

5 V

T

J

= 25°C

100°C

25°C

T

J

= −55°C

25°C

100°C

V

GS

= 10 V

I

D

= 50 A

MTY100N10E

MTY100N10E

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