BUK7Y1R7-40HX Datasheet BUK7Y1R7-40HX | P1-P3

BUK7Y1R7-40H

N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56

9 May 2018 Product data sheet

1. General description

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction

technology, housed in a robust LFPAK56 package. This product has been fully designed and

qualified to meet AEC-Q101 requirements delivering high performance and endurance.

2. Features and benefits

• Fully automotive qualified to AEC-Q101:

• 175 °C rating suitable for thermally demanding environments

• Trench 9 Superjunction technology:

• Reduced cell pitch enables enhanced power density and efficiency with lower R

DSon

same footprint

• Improved SOA and avalanche capability compared to standard TrenchMOS

• Tight V

GS(th)

limits enable easy paralleling of MOSFETs

• LFPAK Gull Wing leads:

• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

• Visual (AOI) soldering inspection, no need for expensive x-ray equipment

• Easy solder wetting for good mechanical solder joint

• LFPAK copper clip technology:

• Improved reliability, with reduced R

and R

DSon

• Increases maximum current capability and improved current spreading

3. Applications

• 12 V automotive systems

• Motors, lamps and solenoid control

• Start-Stop micro-hybrid applications

• Transmission control

• Ultra high performance power switching

Nexperia

BUK7Y1R7-40H

N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175 °C - - 40 V

drain current V

= 10 V; T

= 25 °C - - 120 A

tot

total power dissipation T

= 25 °C; Fig. 1 - - 294 W

Static characteristics

DSon

drain-source on-state

resistance

= 10 V; I

= 25 A; T

= 25 °C;

Fig. 10

0.95 1.35 1.7 mΩ

Dynamic characteristics

gate-drain charge I

= 25 A; V

= 32 V; V

= 10 V;

Fig. 12; Fig. 13

- 10 25 nC

Source-drain diode

recovered charge I

= 25 A; dI

/dt = -100 A/µs; V

= 0 V;

= 20 V; Fig. 16

- 25 - nC

S softness factor I

= 25 A; dI

/dt = -100 A/µs; V

= 0 V;

= 20 V; T

= 25 °C; Fig. 16

- 0.8 -

BUK7Y1R7-40H All information provided in this document is subject to legal disclaimers.

Product data sheet 9 May 2018 2 / 13

Nexperia

BUK7Y1R7-40H

N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected to

drain

1 2 3 4

LFPAK56; Power-

SO8 (SOT669)

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BUK7Y1R7-40H LFPAK56;

Power-SO8

plastic, single-ended surface-mounted package; 4 terminals SOT669

7. Marking

Table 4. Marking codes

Type number Marking code

BUK7Y1R7-40H 71H740

BUK7Y1R7-40H All information provided in this document is subject to legal disclaimers.

Product data sheet 9 May 2018 3 / 13

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

BUK7Y1R7-40HX

Mfr. #:

Buy BUK7Y1R7-40HX

Manufacturer:

Nexperia

Description:

MOSFET Mosfet1.7ohmsTrench9 AEC-Q101 qualified

Lifecycle:

New from this manufacturer.

Delivery:

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BUK7Y1R7-40HX