Nexperia
BUK7Y1R7-40H
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - 40 V
V
GS
gate-source voltage DC; T
j
≤ 175 °C -10 20 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 294 W
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C - 120 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C; Fig. 2 - 600 A
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C [1] - 120 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 600 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 120 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
[2] [3] - 158 mJ
[1] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
BUK7Y1R7-40H All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 9 May 2018 4 / 13
