Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
D
2
P
A
K
BUK9675-100A
N-channel TrenchMOS logic level FET
18 August 2015 Product data sheet
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1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
3. Applications
Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
= 5 V; T
mb
= 25 °C; Fig. 2 - - 23 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 98 W
Static characteristics
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12
- 55 72 R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C; Fig. 12 - 60 75
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 23 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1][2] - - 100 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
NXP Semiconductors
BUK9675-100A
N-channel TrenchMOS logic level FET
BUK9675-100A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 18 August 2015 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
mb D mounting base; connected to
drain
mb
1 3
2
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK9675-100A D2PAK plastic single-ended surface-mounted package
(D2PAK); 3 leads (one lead cropped)
SOT404
7. Marking
Table 4. Marking codes
Type number Marking code
BUK9675-100A BUK9675-100A
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
= 20 kΩ - 100 V
V
GS
gate-source voltage -15 15 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 98 W
T
mb
= 100 °C; V
GS
= 5 V; Fig. 2 - 16 AI
D
drain current
T
mb
= 25 °C; V
GS
= 5 V; Fig. 2 - 23 A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs; Fig. 3 - 92 A
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C

BUK9675-100A,118

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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