NXP Semiconductors
BUK9675-100A
N-channel TrenchMOS logic level FET
BUK9675-100A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 18 August 2015 6 / 12
Symbol Parameter Conditions Min Typ Max Unit
from upper edge of drain tab to centre
of die; T
j
= 25 °C
- 2.5 - nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
= 25 °C
- 7.5 - nH
Source-drain diode
V
SD
source-drain voltage I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 17 - 0.85 1.2 V
t
rr
reverse recovery time - 53.7 - ns
Q
r
recovered charge
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 30 V; T
j
= 25 °C
- 126 - nC
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0 1 2 3 4
0
8
16
24
32
40
V
DS
(V)
I
D
I
D
(A)(A)
2.2 V2.2 V
2.4 V2.4 V
2.6 V2.6 V
2.8 V2.8 V
V
GS
= 3 VV
GS
= 3 V
3.2 V3.2 V
3.4 V3.4 V
3.6 V3.6 V4 V4 V5 V5 V10 V10 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
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V
GS
(V)
3 5 7 9 10864
60
65
55
70
75
R
DS(on)
(mΩ)
50
T
j
= 25 °C; I
D
= 25 A
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
10
15
5
20
25
I
D
(A)
0
V
GS
(V)
0 431 2
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T
j
= 25 °CT
j
= 175 °C
V
DS
> I
D
x R
DSon
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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V
GS
(V)
0 604020
0
30
20
10
40
g
fs
(S)
V
DS
> I
D
x R
DSon
Fig. 9. Forward transconductance as a function of
drain current; typical values
