FM27C256V150

4
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FM27C256 262,144-Bit (32K x 8) High Performance CMOS EPROM
www.fairchildsemi.com
FM27C256 Rev. A
AC Test Conditions
Output Load 1 TTL Gate and CL = 100 pF (Note 8)
Input Rise and Fall Times 5 ns
Input Pulse Levels 0.45 to 2.4V
Timing Measurement Reference Level (Note 10)
Inputs 0.8V and 2.0V
Outputs 0.8V and 2.0V
AC Waveforms (Note 6) (Note 7) (Note 9)
Note 1: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 2: This parameter is only sampled and is not 100% tested.
Note 3: OE may be delayed up to t
ACC
- t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4: The t
DF
and t
CF
compare level is determined as follows:
High to TRI-STATE
®
, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5: TRI-STATE may be attained using OE or CE.
Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 µF ceramic capacitor be used on every device
between V
CC
and GND.
Note 7: The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8: TTL Gate: I
OL
= 1.6 mA, I
OH
= -400 µA.
C
L
= 100 pF includes fixture capacitance.
Note 9: V
PP
may be connected to V
CC
except during programming.
Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Note 11: CMOS inputs: V
IL
= GND ±0.3V, V
IH
= V
CC
±0.3V.
ADDRESSES VALID
VALID OUTPUT
Hi-ZHi-Z
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
ADDRESSES
CE
OE
OUTPUT
t
OE
(Note 3)
t
ACC
(Note 3)
t
CE
t
CE
(Notes 4, 5)
t
OH
t
DF
(Notes 4, 5)
5
www.fairchildsemi.com
FM27C256 262,144-Bit (32K x 8) High Performance CMOS EPROM
www.fairchildsemi.com
FM27C256 Rev. A
Programming Characteristics (Note 12) (Note 13) (Note 14) (Note 15)
Symbol Parameter Conditions Min Typ Max Units
t
AS
Address Setup Time 1 µs
t
OES
OE Setup Time 1 µs
t
VPS
V
PP
Setup Time 1 µs
t
VCS
V
CC
Setup Time 1 µs
t
DS
Data Setup Time 1 µs
t
AH
Address Hold Time 0 µs
t
DH
Data Hold Time 1 µs
t
DF
Output Enable to Output CE = V
IL
060ns
Float Delay
t
PW
Program Pulse Width 45 50 105 µs
t
OE
Data Valid from OE CE = V
IL
100 ns
I
PP
V
PP
Supply Current CE = V
IL
30 mA
during Programming Pulse
I
CC
V
CC
Supply Current 50 mA
T
A
Temperature Ambient 20 25 30 °C
V
CC
Power Supply Voltage 6.25 6.5 6.75 V
V
PP
Programming Supply Voltage 12.5 12.75 13.0 V
t
FR
Input Rise, Fall Time 5 ns
V
IL
Input Low Voltage 0.0 0.45 V
V
IH
Input High Voltage 2.4 4.0 V
t
IN
Input Timing Reference Voltage 0.8 2.0 V
t
OUT
Output Timing Reference Voltage 0.8 2.0 V
Programming Waveforms (Note 14)
Note 12: Fairchilds standard product warranty applies to devices programmed to specifications described herein.
Note 13: V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
. The EPROM must not be inserted into or removed from a board with
voltage applied to V
PP
or V
CC
.
Note 14: The maximum absolute allowable voltage which may be applied to the V
PP
pin during programming is 14V. Care must be taken when switching the V
PP
supply to
prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1 µF capacitor is required across V
PP
, V
CC
to GND to suppress spurious voltage transients
which may damage the device.
Note 15: During power up the PGM pin must be brought high ( V
IH
) either coincident with or before power is applied to V
PP
.
ADDRESS N
DATA IN STABLE
ADD N
DATA OUT VALID
ADD N
2.0V
0.8V
2.0V
0.8V
5.25V
12.75V
2.0V
0.8V
2.0V
0.8V
ADDRESSES
DATA
CE
V
PP
V
CC
OE
t
OE
t
OES
t
PW
t
VPS
t
VCS
t
DS
t
AS
t
AH
t
DF
t
DH
PROGRAM
PROGRAM
VERIFY
6
www.fairchildsemi.com
FM27C256 262,144-Bit (32K x 8) High Performance CMOS EPROM
www.fairchildsemi.com
FM27C256 Rev. A
Turbo Programming Algorithm Flow Chart
V
CC
= 6.5V V
PP
= 12.75V
n = 0
ADDRESS = FIRST LOCATION
CHECK ALL BYTES
1ST: V
CC
= V
PP
= 6.0V
2ND: V
CC
= V
PP
= 4.3V
PROGRAM ONE 50µs PULSE
INCREMENT n
ADDRESS = FIRST LOCATION
VERIFY
BYTE
n = 10?
DEVICE
FAILED
LAST
ADDRESS
?
INCREMENT
ADDRESS
n = 0
PROGRAM ONE
50 µs
PULSE
INCREMENT
ADDRESS
VERIFY
BYTE
LAST
ADDRESS
?
PASS
NO
FAIL
YES
YES
PASS
NO
FAIL
NO
YES
Note: The standard National Semiconductor algorithm may also be used but it will have longer programming time.
FIGURE 1.

FM27C256V150

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC EPROM 256K PARALLEL 32PLCC
Lifecycle:
New from this manufacturer.
Delivery:
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