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NTGS3441T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 6
1 Publication Order Number:
NTGS3441T1/D
NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P−Channel TSOP−6
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
"8.0 V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
244
0.5
−1.65
−10
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
128
1.0
−2.35
−14
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
62.5
2.0
−3.3
−20
°C/W
W
A
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to 150 °C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
1 AMPERE
20 VOLTS
R
DS(on)
= 90 mW
3
4
1256
Device Package Shipping
†
ORDERING INFORMATION
NTGS3441T1G TSOP−6
(Pb−Free)
3000 / Tape & Reel
P−Channel
http://onsemi.com
NVGS3441T1G TSOP−6
(Pb−Free)
3000 / Tape& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
PT MG
G
PT = Specific Device Code
M = Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTGS3441, NVGS3441
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Notes 4 & 5)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −10 mA)
V
(BR)DSS
−20 − −
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −20 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −20 Vdc, T
J
= 70°C)
I
DSS
−
−
−
−
−1.0
−5.0
mAdc
Gate−Body Leakage Current
(V
GS
= −8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mAdc)
V
GS(th)
−0.45 −1.05 −1.50
Vdc
Static Drain−Source On−State Resistance
(V
GS
= −4.5 Vdc, I
D
= −3.3 Adc)
(V
GS
= −2.5 Vdc, I
D
= −2.9 Adc)
R
DS(on)
−
−
0.069
0.117
0.090
0.135
W
Forward Transconductance
(V
DS
= −10 Vdc, I
D
= −3.3 Adc)
g
FS
− 6.8 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 480 − pF
Output Capacitance C
oss
− 265 − pF
Reverse Transfer Capacitance C
rss
− 100 − pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time
(V
DD
= −20 Vdc, I
D
= −1.6 Adc,
V
GS
= −4.5 Vdc, R
g
= 6.0 W)
t
d(on)
− 13 25 ns
Rise Time t
r
− 23.5 45 ns
Turn−Off Delay Time t
d(off)
− 27 50 ns
Fall Time t
f
− 24 45 ns
Total Gate Charge
(V
DS
= −10 Vdc, V
GS
= −4.5 Vdc,
I
D
= −3.3 Adc)
Q
tot
− 6.2 14 nC
Gate−Source Charge Q
gs
− 1.3 − nC
Gate−Drain Charge Q
gd
− 2.5 − nC
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage (I
S
= −1.6 Adc, V
GS
= 0 Vdc) V
SD
− −0.88 −1.2 Vdc
Diode Forward On−Voltage (I
S
= −3.3 Adc, V
GS
= 0 Vdc) V
SD
− −0.98 − Vdc
Reverse Recovery Time
(I
S
= −1.6 Adc, dI
S
/dt = 100 A/ms)
t
rr
− 30 60 ns
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
NTGS3441, NVGS3441
http://onsemi.com
3
0
10
1.6
8
6
21.20.8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
4
2
0
0.4
Figure 1. On−Region Characteristics
0.4
20
16
2 2.41.61.2 2.8
12
8
4
0.8
0
3.2 3.6 4
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
25
0.1
47
0.3
0.2
0
8
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
016
0.24
20128
0.2
0.16
0.12
0.08
4
0.04
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
V
GS
= −10 V
V
GS
= −6 V
V
GS
= −4.5 V
V
GS
= −4 V
V
GS
= −3.5 V
V
GS
= −2 V
V
GS
= −2.5 V
V
GS
= −2.7 V
V
GS
= −3 V
V
GS
= −1.5 V
0.4
36
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
I
D
= −3.3 A
T
J
= 25°C
V
DS
> = −10 V
0.28
0
75 150
T
J
= 25°C
V
GS
= −2.5 V
V
GS
= −4.5 V
I
D
= −3.3 A
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
016
0.1
20128
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
DSS,
LEAKAGE (nA)
10
100
1
4
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
V
GS
= 0 V
TYPICAL ELECTRICAL CHARACTERISTICS
P1-P3P4-P6

NTGS3441T1G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 1A P-Channel
Lifecycle:
New from this manufacturer.
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